Zobrazeno 1 - 10 of 220 pro vyhledávání: '"Beijerinck, H.C.W."'
1
Akademický článek
Dual-mode device for in situ testing of MEMS packaging quality
Autor: Suijlen, M.A.G., van der Avoort, C., van Beek, J.T.M., Koning, J.J., Beijerinck, H.C.W.
Publikováno v: In Sensors & Actuators: A. Physical March 2012 175:139-149
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2
Akademický článek
Progress towards atom lithography on iron
Autor: te Sligte, E. ∗, Smeets, B., Bosch, R.C.M., van der Stam, K.M.R., Maguire, L.P., Scholten, R.E., Beijerinck, H.C.W., van Leeuwen, K.A.H.
Publikováno v: In Microelectronic Engineering 2003 67:664-669
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4
Surface roughness in XeF2 etching of a-Si/c-Si(100). [Erratum to document cited in CA143:121009]
Autor: Stevens, A.A.E., Beijerinck, H.C.W.
Publikováno v: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 24(4), 1151-1151. AVS Science and Technology Society
On page 134, Figure 16 is incorrect; the correct version of the figure is given. Abstract not available.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::01e460ebd14e8a33a3430e570aba01ca
https://research.tue.nl/nl/publications/e1a3349b-9a1b-431a-b3d1-4381a487e3e3
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5
Ion-radical synergy in HfO2 etching studied in a beam experiment
Autor: Gevers, P.M., Beijerinck, H.C.W., Sanden, van de, M.C.M., Kessels, W.M.M.
Publikováno v: AVS 53rd International Symposium, Moscone West, San Francisco, CA, USA, November 12-17, 2006
Plasma Etch and Strip in Microelectronics 1st International Symposium (PESM), 10-11 September, 2007, Leuven, Belgium : Abstract Book
only.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7b6ef97dc0984456407465a6119b29a7
https://research.tue.nl/nl/publications/f303b8b4-7461-4843-9235-7d9eb7cf3371
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6
Measurement of the photoionization cross section of the (2p)5(3p) 3D3 state of neon
Autor: Claessens, B.J., Ashmore, J.P., Sang, R.T., MacGillivray, W.R., Beijerinck, H.C.W., Vredenbregt, E.J.D.
Publikováno v: Physical Review A : Atomic, Molecular and Optical Physics, 73(1):012706, 012706-1/6. American Physical Society
We report a new measurement of the photoionization cross section for the (2p)(3p)5 D33 state of neon at the wavelengths of 351 and 364nm . These data were obtained by monitoring the decay of the fluorescence of atoms trapped in a magneto-optical atom
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::1689534b9717dd5fbafca9e0e791f584
https://research.tue.nl/nl/publications/37217655-e779-4452-8525-02fc1d3458c6
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