Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Behnaz Akbarnavaz Farkoush"'
Publikováno v:
Silicon. 12:2733-2740
In this Research, the Effect of Source Stack Engineering on the Drive Current of a Proposed Silicon on Insulator-Tunnel FET (SOI-TFET) Is Investigated. The Proposed TFET Scheme Is Similar to a Conventional TFET, but there Is a P+ Doping Stack above t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374360ce12fc5d33b2a18a2c56444cd7
https://doi.org/10.1007/s12633-019-00371-7
https://doi.org/10.1007/s12633-019-00371-7
