InAs/Al 0.2Ga 0.8Sb quantum well Hall effect sensors

Autor: Behet, M ^a, Bekaert, J ^b, De Boeck, J ^{a, *}, Borghs, G ^a

Publikováno v: In Sensors & Actuators: A. Physical 2000 81(1):13-17

Suppression of Josephson currents in ballistic junctions by an injection current

Autor: Golubov, A.A., Neurohr, K., Schäpers, Th., Lüth, H., Behet, M.

Publikováno v: In Superlattices and Microstructures May 1999 25(5-6):1033-1040

Skipping orbits and enhanced resistivity in large diameter InAs/GaSb antidot lattices

Autor: Eroms, Jonathan, Zitzlsperger, M., Weiss, Dieter, Smet, J., Albrecht, C., Fleischmann, R., Behet, M., DeBoeck, J., Borghs, G.

We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. For samples with large antidot diameter, we found a broad maximum of classical origin around 2.5 T in addition to the usual commensurability features at low

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff759e6990993ac88f771383ad755a8a

InP-based heterostructures for low noise and power applications

Autor: van der Zanden, K., Behet, M., Meer, van, H., Schreurs, D., Borghs, G.

Publikováno v: 7th European Workshop on Heterostructure Technology, HETECH '97, 19-20
STARTPAGE=19;ENDPAGE=20;TITLE=7th European Workshop on Heterostructure Technology, HETECH '97

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::6f45a8fcbcc19a380aef729a6fcc62d8
https://research.tue.nl/nl/publications/d63301c5-f017-4cbe-88ef-410536a1cdc0

Resonant tunneling observed in InP/sub 0.69/Sb/sub 0.31//InAs-heterostructures grown by LP-MOVPE.

Autor: Behet, M., Stoll, B., Schneider, P., Mesquida Kusters, A., Heime, K.

Publikováno v: 1993 (5th) International Conference on Indium Phosphide & Related Materials; 1993, p719-722, 4p