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pro vyhledávání: '"Begum Yavas-Aydin"'
Autor:
Davide Cimbri, Begum Yavas-Aydin, Fabian Hartmann, Fauzia Jabeen, Lukas Worschech, Sven Hofling, Edward Wasige
Publikováno v:
IEEE Transactions on Electron Devices
In this article, we demonstrate a reliable physics-based simulation approach to accurately model high-speed In 0.53 Ga 0.47 As/AlAs double-barrier resonant tunneling diodes (RTDs). It relies on the nonequilibrium Green’s function (NEGF) formalism i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b94534e64460769693aef07ea60014a
https://eprints.gla.ac.uk/271617/2/271617.pdf
https://eprints.gla.ac.uk/271617/2/271617.pdf