A 12.5 GHz divide-by-eight prescaler in GaInP/GaAs HBT technology

Autor: Prasad, S.J., Haynes, C., Vetanen, B., Beers, I., Park, S.

Publikováno v: Prasad, S.J. ; Haynes, C. ; Vetanen, B. ; Beers, I. ; Park, S. (1994) A 12.5 GHz divide-by-eight prescaler in GaInP/GaAs HBT technology. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

A fully integrated pre-amplifier and a static divide-by-eight prescaler clocking at 12.5GHz realized in a GaInP/GaAs HBT technology is presented. The HBT process incorporates Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d67bbd578a94c0f33480cf1f4b2f67
http://amsacta.unibo.it/1832/

An implant-free AlGaAs/GaAs HBT IC technology incorporating 1.4 THz Schottky diodes.

Autor: Prasad, S.J., Vetanen, B., Haynes, C., Park, S., Beers, I., Diamond, S., Pubanz, G., Ebner, J., Sanielevici, S., Agoston, A.

Publikováno v: Proceedings of the 1991 Bipolar Circuits & Technology Meeting; 1991, p79-82, 4p

A 45 GHz AlGaAs/GaAs HBT IC technology.

Autor: Prasad, S.J., Vetanen, B., Haynes, C., Park, S., Beers, I., Diamond, S., Pubanz, G., Ebner, J., Sanielevici, S., Agoston, A.

Publikováno v: 1991 GaAs IC Symposium Technical Digest; 1991, p121-124, 4p

A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation.

Autor: Prasad, S.J., Vetanen, B., Haynes, C., Park, S., Beers, I., Diamond, S., Pubanz, G., Ebner, J., Sanielevici, S., Agoston, A.

Publikováno v: ESSDERC '92: 22nd European Solid State Device Research conference; 1992, p413-416, 4p

First demonstration of 60 GHz-fT, GaInP/GaAs HBT IC technology with 28 ps ECL gate delay.

Autor: Prasad, S.J., Vetanen, B., Haynes, C., Beers, I., Park, S.

Publikováno v: Electronics Letters (Institution of Engineering & Technology); 02/04/1993, Vol. 29 Issue 3, p320-321, 2p