Zobrazeno 1 - 10
of 720
pro vyhledávání: '"Beere, H."'
Autor:
Pyurbeeva, E., Blumenthal, M. D., Mol, J. A., Howe, H., Beere, H. E., Mitchell, T., Ritchie, D. A., Pepper, M.
We present the first detailed study of the effect of a strong magnetic field on single-electron pumping in a device utilising a finger-gate split-gate configuration. In the quantum Hall regime, we demonstrate electron pumping from Landau levels in th
Externí odkaz:
http://arxiv.org/abs/2406.13615
Autor:
Barik, Bikash C., Chakraborti, Himadri, Jain, Aditya K., Pal, Buddhadeb, Beere, H. E., Ritchie, D. A., Gupta, K. Das
A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the
Externí odkaz:
http://arxiv.org/abs/2402.13363
Publikováno v:
Physical Review B 106, 075411 (2022)
A new photoelectric phenomenon, the in-plane photoelectric (IPPE) effect, has been recently discovered at terahertz (THz) frequencies in a GaAs/Al$_x$Ga$_{1-x}$As heterostructure with a two-dimensional (2D) electron gas (W. Michailow et al., Sci. Adv
Externí odkaz:
http://arxiv.org/abs/2110.15932
Autor:
Shetty, A., Sfigakis, F., Mak, W. Y., Gupta, K. Das, Buonacorsi, B., Tam, M. C., Kim, H. S., Farrer, I., Croxall, A. F., Beere, H. E., Hamilton, A. R., Pepper, M., Austing, D. G., Studenikin, S. A., Sachrajda, A., Reimer, M. E., Wasilewski, Z. R., Ritchie, D. A., Baugh, J.
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs loc
Externí odkaz:
http://arxiv.org/abs/2012.14370
Autor:
Lo, Shun-Tsung, Chen, Chin-Hung, Fan, Ju-Chun, Smith, L. W., Creeth, G. L., Chang, Che-Wei, Pepper, M., Griffiths, J. P., Farrer, I., Beere, H. E., Jones, G. A. C., Ritchie, D. A., Chen, Tse-Ming
Publikováno v:
Nature Communications 8, 15997 (2017)
The spatial separation of electron spins followed by the control of their individual spin dynamics has recently emerged as an essential ingredient in many proposals for spin-based technologies because it would enable both of the two spin species to b
Externí odkaz:
http://arxiv.org/abs/1801.10148
Autor:
Zheng, B., Croxall, A. F., Waldie, J., Gupta, K. Das, Sfigakis, F., Farrer, I., Beere, H. E., Ritchie, D. A.
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells.
Externí odkaz:
http://arxiv.org/abs/1511.08701
Autor:
Chuang, Pojen, Ho, Sheng-Chin, Smith, L. W., Sfigakis, F., Pepper, M., Chen, Chin-Hung, Fan, Ju-Chun, Griffiths, J. P., Farrer, I., Beere, H. E., Jones, G. A. C., Ritchie, D. A., Chen, Tse-Ming
Publikováno v:
Nature Nanotechnology 10, 35-39 (2015)
The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect tra
Externí odkaz:
http://arxiv.org/abs/1506.06507
Autor:
Tighineanu, P., Daveau, R. S., Lehmann, T. B., Beere, H. E., Ritchie, D. A., Lodahl, P., Stobbe, S.
Publikováno v:
Phys. Rev. Lett. 116, 163604 (2016)
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The elect
Externí odkaz:
http://arxiv.org/abs/1506.05705
Autor:
Smith, L. W., Al-Taie, H., Lesage, A. A. J., Sfigakis, F., See, P., Griffiths, J. P., Beere, H. E., Jones, G. A. C., Ritchie, D. A., Hamilton, A. R., Kelly, M. J., Smith, C. G.
Publikováno v:
Phys. Rev. B 91, 23540 (2015)
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplex
Externí odkaz:
http://arxiv.org/abs/1503.01490
Autor:
Smith, L. W., Al-Taie, H., Sfigakis, F., See, P., Lesage, A. A. J., Xu, B., Griffiths, J. P., Beere, H. E., Jones, G. A. C., Ritchie, D. A., Kelly, M. J., Smith, C. G.
Publikováno v:
Phys. Rev. B 90, 045426 (2014)
The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a si
Externí odkaz:
http://arxiv.org/abs/1407.7441