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Autor:
Husremović, S., Goodge, B. H., Erodici, M., Inzani, K., Mier, A., Ribet, S. M., Bustillo, K. C., Taniguchi, T., Watanabe, K., Ophus, C., Griffin, S. M., Bediako, D. K.
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1$T$-TaS$_2$ due to charge density wave (CDW) phase transitions. However, the metastability responsible
Externí odkaz:
http://arxiv.org/abs/2303.04387
