Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Beddiaf, Abdelaziz"'
Publikováno v:
Russian Microelectronics; Aug2024, Vol. 53 Issue 4, p355-361, 7p
Autor:
Beddiaf, Abdelaziz, Kerrour, Fouad
Publikováno v:
Bulletin of Electrical Engineering & Informatics; Oct2023, Vol. 12 Issue 5, p2784-2793, 10p
Publikováno v:
Journal of Sensor Technology. :59-65
Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24435a8c4e9514d6756e0f731389a55f
https://doi.org/10.4236/jst.2014.42007
https://doi.org/10.4236/jst.2014.42007
Publikováno v:
Scopus-Elsevier
In this paper we investigate the thermo mechanical behavior of a silicon piezoresistive pressure sensor. The totally built-in thin silicon membrane sensor response computation under constant and uniform pressure assuming small deflections have been d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10ee1a424a14b0b3450ca2e0adee3464
https://doi.org/10.15866/iremos.v7i3.1070
https://doi.org/10.15866/iremos.v7i3.1070
Publikováno v:
International Journal of Electrical & Computer Engineering (2088-8708); Jun2016, Vol. 6 Issue 3, p1223-1232, 10p
Autor:
Beddiaf Abdelaziz, Kerrour, F.
Publikováno v:
Scopus-Elsevier
Journal of Engineering Science and Technology, Vol 12, Iss 10, Pp 2677-2690 (2017)
Journal of Engineering Science and Technology, Vol 12, Iss 10, Pp 2677-2690 (2017)
Piezoresistive pressure sensors, using a Wheatstone bridge with the piezoresistors, are typically supplied with a voltage ranging from 3 to 10 V involve thermal drift caused by Joule heating. In this paper, an accurate numerical model for optimizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::271b92b851220d7bdc38d87a70a16fbb
http://www.scopus.com/inward/record.url?eid=2-s2.0-85031802160&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85031802160&partnerID=MN8TOARS
Publikováno v:
Scopus-Elsevier
Journal of Engineering Science and Technology, Vol 11, Iss 3, Pp 346-361 (2016)
Journal of Engineering Science and Technology, Vol 11, Iss 3, Pp 346-361 (2016)
The capacitive pressure sensors based on silicon are characterized by their very high sensitivities and their low power consumption. Nevertheless, their thermal behavior remains more or less unpredictable because they can indicate very high thermal c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2956204af007b0289b8a16fa5c4bc751
http://www.scopus.com/inward/record.url?eid=2-s2.0-84975824318&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84975824318&partnerID=MN8TOARS