Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

Autor: Matt D'Amore, Steven Taiyu Lin, Beckie Chan, P. C. Chang, Augusto Gutierrez-Aitken, E. Kaneshiro, K. Sato, Cedric Monier, Dennis W. Scott, Abdullah Cavus, Bert K. Oyama, Aaron K. Oki

Publikováno v: 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our producti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4bf3787089b1a4031e4c8984849c19b7
https://doi.org/10.1109/csics.2009.5315670

An Ultra-Wideband 7-Bit 5-Gsps ADC Implemented in Submicron InP HBT Technology.

Autor: Chan, Beckie, Oyama, Bert, Monier, Cedric, Gutierrez-Aitken, Augusto

Publikováno v: IEEE Journal of Solid-State Circuits; Oct2008, Vol. 43 Issue 10, p2187-2193, 7p, 6 Black and White Photographs, 5 Diagrams, 1 Chart, 9 Graphs