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pro vyhledávání: '"Bechlaghem Fz"'
Autor:
Hamdoune A, Bechlaghem Fz
The objective of this paper is to simulate the effect of a BGaN back-barrier on performances of a high electron mobility transistor (HEMT) based on AlGaN/InGaN, by using TCAD 3D Silvaco simulator. We simulate some DC and AC characteristics; we note t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aac2024219723d14c5e98fe69668b0f2
https://doi.org/10.21203/rs.3.rs-370364/v1
https://doi.org/10.21203/rs.3.rs-370364/v1
