Výsledky vyhledávání - "Beaumont, Arnaud"

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Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and Oscillations. A Review of State of the Art and Recent Progress

Autor: Pergament, Alexander, Crunteanu, Aurelian, Beaumont, Arnaud, Stefanovich, Genrikh, Velichko, Andrey

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this switching ef

Externí odkaz: http://arxiv.org/abs/1601.06246

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Etude des mécanismes de transport électrique dans des structures à base de nanocristaux de silicium ordonnés

Autor: Beaumont, Arnaud Souifi, Abdelkader.

Thèse doctorat : Dispositifs de l'Electronique Intégrée : Villeurbanne, INSA : 2005.
Titre provenant de l'écran-titre. Bibliogr. p. 169-175.

Externí odkaz: http://docinsa.insa-lyon.fr/these/pont.php?id=beaumont

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Akademický článek

Current conduction models in the high temperature single-electron transistor

Autor: Dubuc, Christian, Beaumont, Arnaud, Beauvais, Jacques, Drouin, Dominique

Publikováno v: In Solid State Electronics 2009 53(5):478-482

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Akademický článek

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SCERNE, a platform for the Modeling and Simulation of RF FrontEnd at System level

Autor: Mons, Sébastien, Beaumont, Arnaud, Ngoya, Edouard

Publikováno v: 3rd ESA Workshop on Advanced Flexible Telecom Payloads
3rd ESA Workshop on Advanced Flexible Telecom Payloads, Mar 2016, Noordwijk, Netherlands

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e53863e7e5e99d98fe9ba8bb3c142665
https://hal-unilim.archives-ouvertes.fr/hal-01296319

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SIMULIM, a platform for the modeling and Simulation at System Level

Autor: Mons, Sébastien, Beaumont, Arnaud, Ngoya, Edouard

Publikováno v: 3th International Workshop on Simulation at the System Level
3th International Workshop on Simulation at the System Level, Oct 2015, Paris, France

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5396e17c90d4a4d70e64c8c322218f22
https://hal-unilim.archives-ouvertes.fr/hal-01296321

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Switching and oscillations in vanadium dioxide based devices for neuromorphic function implementation

Autor: Beaumont, Arnaud, Orlianges, Jean-Christophe, Boulle, Alexandre, Pergament, Alexander, Crunteanu, Aurelian

Publikováno v: Workshop on Oxide Electronics, WOE 22, College de France, Paris-October 7-9, 2015
Workshop on Oxide Electronics, WOE 22, College de France, Paris-October 7-9, 2015, Oct 2015, Paris, France

International audience; Nowadays information processing is widely performed by CMOS circuits on the base of Boolean logics whose capabilities appear to be close to its immanent limit related to the sequential nature of computation. The multi-core tre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7d136eae62274fb7ae1b7691a9bc4860
https://hal.archives-ouvertes.fr/hal-01226188

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Metal-insulator transition materials for bioinspired functions implementation

Autor: Beaumont, Arnaud, Orlianges, Jean-Christophe, Boulle, Alexandre, Adly, Samir, Tonnelier, Arnaud, Acary, Vincent, Pergament, Alexander, Crunteanu, Aurelian

Publikováno v: Le premier colloque du GDR BioComp 4 au 8 octobre 2015 à Saint Paul de Vence, France
Le premier colloque du GDR BioComp 4 au 8 octobre 2015 à Saint Paul de Vence, France, Oct 2015, Saint Paul de Vence, France

National audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::50dde9c76c226e351949448cc1d65beb
https://hal.archives-ouvertes.fr/hal-01226172

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Strain and thickness dependence of the metal-insulator transition in VO2 epitaxial films

Autor: Théry, Virginie, Orlianges, Jean-Christophe, Boulle, Alexandre, Mennai, Amine, Bessaudou, Annie, Cosset, Françoise, Beaumont, Arnaud, Crunteanu, Aurelian

Publikováno v: European Material Research Society (E-MRS) Spring Meeting (Symposium M)
European Material Research Society (E-MRS) Spring Meeting (Symposium M), May 2015, Lille, France

International audience; One of the emerging fields in nano-electronics is the adaptive electronics based on resistive memories integrating functional oxides. In this context, the most promising memories and devices make use of the Mott Metal-Insulato

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e8d920da05a02c34e82b04842d158e65
https://hal.archives-ouvertes.fr/hal-01226170

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