Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Beatrix Weiss"'
Autor:
Peter Grant, Scott Jennings, Beatrix Weiss, Zakir Akhunji, Levi Bassin, Michael Cheung, Damian Gimpel, Hugh Wolfenden
Publikováno v:
Heart, Lung and Circulation. 29:1713-1724
Background Ischaemic mitral regurgitation (IMR) carries significant morbidity and mortality. Surgical management includes coronary artery bypass surgery alone or concomitant with mitral valve repair or replacement. There is ongoing debate regarding t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fab5711c990a14f716bd546496057f9
https://doi.org/10.1016/j.hlc.2020.03.007
https://doi.org/10.1016/j.hlc.2020.03.007
Publikováno v:
ANZ journal of surgery. 91(11)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d0dc660ef32bfc119f8957c8bd91565
https://pubmed.ncbi.nlm.nih.gov/33769653
https://pubmed.ncbi.nlm.nih.gov/33769653
Autor:
Patrick Waltereit, Beatrix Weiss, Oliver Ambacher, Michael Dammann, Richard Reiner, Thomas Gerrer, Matthias Sinnwell, Stefan Moench, Dirk Meder, Rudiger Quay
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This work presents a Si-substrate removal technique for AlGaN/GaN devices on PCB carriers. The Si-removal method is explained and experimentally applied to PCB-embedded AlGaN/GaN-on-Si devices. The PCB-embedding package is reopened at the thermal pad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e562247997aaeb251b643f7f3691b6e0
https://doi.org/10.1109/ispsd46842.2020.9170078
https://doi.org/10.1109/ispsd46842.2020.9170078
Autor:
Rudiger Quay, M. Wespel, Stefan Müller, Oliver Ambacher, Stefan Moench, Beatrix Weiss, Patrick Waltereit, Richard Reiner
Publikováno v:
IET Power Electronics. 11:681-688
This study presents monolithically integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39aeb03e81eba1a308e76215584960f0
https://doi.org/10.1049/iet-pel.2017.0397
https://doi.org/10.1049/iet-pel.2017.0397
Autor:
Beatrix Weiss, Oliver Ambacher, Michael Dammann, Patrick Waltereit, Stefan Moench, Richard Reiner, Rudiger Quay
Publikováno v:
2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
This work investigates a new approach of a multistage cascode. The concept is applied as intrinsic structure in an A1GaN/GaN-on-Si technology. The fabricated device achieves an off-state voltage >600 V and an on-state resistance of 14 Ω mm. A specia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c83f4401d4d6c65f54d161b487333e4
https://doi.org/10.1109/wipda.2018.8569168
https://doi.org/10.1109/wipda.2018.8569168
Autor:
Oliver Ambacher, Patrick Waltereit, Stefan Moench, Rudiger Quay, Ingmar Kallfass, Beatrix Weiss, Richard Reiner
Publikováno v:
2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
The stability of GaN-on-Si HEMTs with substrate-to-source termination is analyzed in a high-voltage half-bridge. The work exposes that external substrate termination creates a parasitic substrate loop, which leads to unstable switching behavior under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8be0095df1ea5ddde3c1fdf96159d7ac
https://doi.org/10.1109/wipda.2018.8569066
https://doi.org/10.1109/wipda.2018.8569066
Autor:
Vladimir Polyakov, Richard Reiner, Patrick Waltereit, Oliver Ambacher, Rudiger Quay, Beatrix Weiss, Dragan Maksimovic
Publikováno v:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
This paper investigates substrate biasing effects in a monolithically-integrated half-bridge stage rated for 600 V/20 A and fabricated in a lateral AlGaN/GaN-on-Si technology. On-resistance degradation effects caused by the common substrate potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be1fdece39a3b75d74b647e254110e94
https://doi.org/10.1109/wipda.2017.8170558
https://doi.org/10.1109/wipda.2017.8170558
Publikováno v:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
This work presents the operation of a PCB-embedded diode-clamped multilevel-converter integrated circuit (IC) fabricated in a lateral, high-voltage AlGaN/GaN-on-Si heterojunction technology. It is demonstrated, that PCB-embedding is an appropriate as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dd190daeb8e4c4b4989e73c4c934f7f
https://doi.org/10.1109/wipda.2017.8170580
https://doi.org/10.1109/wipda.2017.8170580
Autor:
Stefan Moench, Patrick Waltereit, Ingmar Kallfass, Beatrix Weiss, Richard Reiner, Oliver Ambacher, Rudiger Quay
Publikováno v:
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Lateral GaN-on-Si HEMT technology enables integrated high-voltage half-bridges with gate drivers. However, the capacitive coupling through a common conductive substrate influences switching characteristics. The measured hard-switching turn-on time wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::249cc59d30a451b17173021e5f3cbca7
https://doi.org/10.1109/wipda.2017.8170557
https://doi.org/10.1109/wipda.2017.8170557
Autor:
Oliver Ambacher, Rudiger Quay, Beatrix Weiss, Stefan Moench, Patrick Waltereit, Ingmar Kallfass, Richard Reiner
Publikováno v:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
This work presents a monolithically-integrated power circuit with a single control input gate driver based on depletion-mode logic and a 600 V, 150 mΩ power HEMT in GaN-on-Si technology. The gate driver final-stage is a push-pull circuit, in which t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c341c7196dccca553ea82e0f76f4945
https://doi.org/10.1109/wipda.2016.7799938
https://doi.org/10.1109/wipda.2016.7799938