High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Autor: Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo

Publikováno v: Nanomaterials, Vol 11, Iss 6, p 1626 (2021)

In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length ove

Externí odkaz: https://doaj.org/article/8de91cf8224c48cf9041b0afcab35dc0

Statistical Analysis of Dark Current in Silicon Photomultipliers

Autor: Giuseppina Valvo, Alfio Russo, Delfo Sanfilippo, Giovanni Condorelli, Clarice Di Martino, Beatrice Carbone, PierGiorgio Fallica, Roberto Pagano, Sebania Libertino, Salvatore Lombardo

Publikováno v: The Second International Conference on Sensor Device Technologies and Applications SENSORDEVICES 2011, pp. 109–112, Nice/Saint Laurent du Var, France, August 21-27, 2011
info:cnr-pdr/source/autori:Giuseppina Valvo, Alfio Russo, Delfo Sanfilippo, Giovanni Condorelli, Clarice Di Martino, Beatrice Carbone, PierGiorgio Fallica, Roberto Pagano, Sebania Libertino, Salvatore Lombardo/congresso_nome:The Second International Conference on Sensor Device Technologies and Applications SENSORDEVICES 2011/congresso_luogo:Nice%2FSaint Laurent du Var, France/congresso_data:August 21-27, 2011/anno:2011/pagina_da:109/pagina_a:112/intervallo_pagine:109–112

The aim of this paper is to investigate on a statistical basis at the wafer level the relationship existing among the dark currents of the single pixel compared to the whole Silicon Photomultiplier array. This is the first time to our knowledge that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::83fafcba5598ea6491768621ab370dea
http://www.cnr.it/prodotto/i/229549