Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Beata Stanczyk"'
Autor:
Dariusz Czolak, Pawel Kaminski, Jaroslaw Gaca, Michal Kozubal, Krystyna Przyborowska, Paweł Piotr Michałowski, A. Dobrowolski, Maciej J. Szary, Tymoteusz Ciuk, Marek Wojcik, Wawrzyniec Kaszub, Adrianna Chamryga, Beata Stanczyk, Roman Kozlowski, J. Jagiełło, Kinga Kosciewicz
Publikováno v:
Current Applied Physics. 27:17-24
In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::423d9b151de231fb39822d65b27abd37
https://doi.org/10.1016/j.cap.2021.03.021
https://doi.org/10.1016/j.cap.2021.03.021
Autor:
Beata Stańczyk, Marek Wiśniewski
Publikováno v:
Plasma, Vol 7, Iss 2, Pp 465-497 (2024)
The outstanding properties and chemistry of cold atmospheric plasma (CAP) are not sufficiently understood due to their relatively complex systems and transient properties. In this paper, we tried to present a detailed review of the applications of CA
Externí odkaz:
https://doaj.org/article/f6df6c89877f424995103dff3d89c026
High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC
Autor:
Dariusz Czolak, A. Dobrowolski, Michal Kozubal, Wawrzyniec Kaszub, Pawel Kaminski, Beata Stanczyk, J. Jagiełło, Tymoteusz Ciuk, Roman Kozlowski, Krystyna Przyborowska
Publikováno v:
IEEE Transactions on Electron Devices
In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) on-axis 4H-SiC(0001) substrate in a chemical vapor deposition proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cfb1d6141b3ac5eaf6cbcbd6f027b0a
https://doi.org/10.1109/ted.2019.2915632
https://doi.org/10.1109/ted.2019.2915632
Autor:
Krzysztof Rosiński, Krystyna Przyborowska, Paweł Piotr Michałowski, Wawrzyniec Kaszub, Ewa Dumiszewska, Piotr Knyps, Beata Stanczyk
Publikováno v:
ACS applied materialsinterfaces. 10(43)
Further development and optimization of modern optoelectronic devices requires fast and reliable procedures that may evaluate the quality of interfaces. For thick multilayer devices, mixing effect may significantly prevent proper interpretation of se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd60dbfbe6a32c00cb3039c4c8d425d8
https://pubmed.ncbi.nlm.nih.gov/30286287
https://pubmed.ncbi.nlm.nih.gov/30286287
Autor:
Tymoteusz Ciuk, Roman Kozłowski, Agata Romanowska, Andrzej Zagojski, Karolina Piętak-Jurczak, Beata Stańczyk, Krystyna Przyborowska, Dariusz Czołak, Paweł Kamiński
Publikováno v:
Carbon Trends, Vol 13, Iss , Pp 100303- (2023)
High-temperature electrical properties of p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated on-axis 6H-SiC(0001) and high-purity on-axis 4H-SiC(0001) originate from t
Externí odkaz:
https://doaj.org/article/39fda8a9a32d4c46beb1b09a17c30246
Autor:
Zbigniew Rekuc, Michal Kozubal, Andrzej Kozlowski, Beata Stanczyk, Jaroslaw Podgorski, Paweł Piotr Michałowski, Krystyna Przyborowska, Tymoteusz Ciuk, Wawrzyniec Kaszub, Andrzej Kowalik, Iwona Jozwik, Pawel Kaminski
Publikováno v:
Carbon
In this report we demonstrate the results of charge carriers transport studies in graphene using a Hall effect sensor fabricated on quasi-free-standing monolayer graphene grown on a semi-insulating on-axis vanadium-compensated 6H-SiC(0001) substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::039de313e1ad40869a5225a16265f81c