Zobrazeno 1 - 10
of 159
pro vyhledávání: '"Bearda, Twan"'
Autor:
Cho, Jinyoun, Debucquoy, Maarten, Recaman Payo, Maria, Malik, Shuja, Filipič, Miha, Radhakrishnan, Hariharsudan Sivaramakrishnan, Bearda, Twan, Gordon, Ivan, Szlufcik, Jozef, Poortmans, Jef
Publikováno v:
In Energy Procedia September 2017 124:842-850
Autor:
Filipič, Miha, Payo, Maria Recaman, Bearda, Twan, Depauw, Valerie, Radhakrishnan, Hariharsudan Sivaramakrishnan, Van Nieuwenhuysen, Kris, Filipek, Izabela Kuzma, Duerinckx, Filip, Debucquoy, Maarten, Gordon, Ivan, Szlufcik, Jozef, Poortmans, Jef
Publikováno v:
In Energy Procedia September 2017 124:38-46
Autor:
Meddeb, Hosny, Bearda, Twan, Abdulraheem, Yaser, Dimassi, Wissem, Ezzaouia, Hatem, Gordon, Ivan, Szlufcik, Jozef, Poortmans, Jef
Publikováno v:
In Superlattices and Microstructures August 2016 96:253-258
Autor:
Govaerts, Jonathan, Trompoukis, Christos, Radhakrishnan, Hariharsudan S., Tous, Loic, Granata, Stefano N., Carnemolla, Enrico G., Martini, Roberto, Marchegiani, Alessio, Karim, Marwa, Sharlandziev, Ivan, Bearda, Twan, Depauw, Valerie, Van Nieuwenhuysen, Kris, Gordon, Ivan, Szlufczik, Jozef, Poortmans, Jef
Publikováno v:
In Energy Procedia August 2015 77:871-880
Autor:
Meddeb, Hosny, Bearda, Twan, Abdelwahab, Ibrahim, Ferro, Valentina, O'Sullivan, Barry, Abdulraheem, Yaser, Ezzaouia, Hatem, Gordon, Ivan, Szlufcik, Jozef, Poortmans, Jef
Publikováno v:
In Energy Procedia 2014 55:818-826
Akademický článek
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Publikováno v:
In Handbook of Silicon Wafer Cleaning Technology Edition: Third Edition. 2018:87-149
Autor:
Xu, Menglei, Wang, Chong, Bearda, Twan, Simoen, Eddy, Radhakrishnan, Hariharsudan Sivaramakrishnan, Gordon, Ivan, Li, Wei, Szlufcik, Jozef, Poortmans, Jef
© 2018 IEEE. A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H2) plasma treatment followed by in situ intrinsic hydrogenated a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1131::a126f31d8e319926d67966278040a15a
https://lirias.kuleuven.be/handle/123456789/630645
https://lirias.kuleuven.be/handle/123456789/630645
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 1, p183508-1-183508-8, 8p, 1 Black and White Photograph, 3 Diagrams, 4 Graphs
Autor:
Xu, Menglei, Bearda, Twan, Sivaramakrishnan Radhakrishnan, Hariharsudan, Kiran Jonnak, Shashi, Hasan, Mahmudul, Malik, Shuja, Filipič, Miha, Depauw, Valerie, Van Nieuwenhuysen, Kris, Abdulraheem, Yaser, Debucquoy, Maarten, Gordon, Ivan, Szlufcik, Jozef, Poortmans, Jef
Previously, IMEC proposed the i2-module concept which allows to process silicon heterojunction interdigitated back-contact (SHJ-IBC) cells on thin ( < 50 μm) Si wafers at module level. This concept includes the bonding of the thin wafer early on to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=sygma_______::2c3ff7d7e8c881efb6f799005df5932d
https://doi.org/10.5281/zenodo.844366
https://doi.org/10.5281/zenodo.844366