Zobrazeno 1 - 10
of 542
pro vyhledávání: '"Beanland, R."'
Autor:
Barry, Nicolas P.E., Pitto-Barry, Anaïs, Tran, J., Spencer, S.E.F., Johansen, A.M., Sanchez, A.M., Dove, A.P., O'Reilly, R.K., Deeth, R.J., Beanland, R., Sadler, P.J.
Yes
We deposited Os atoms on S- and Se-doped boronic graphenic surfaces by electron bombardment of micelles containing 16e complexes [Os(p-cymene)(1,2-dicarba-closo-dodecarborane-1,2-diselenate/dithiolate)] encapsulated in a triblock copolymer.
We deposited Os atoms on S- and Se-doped boronic graphenic surfaces by electron bombardment of micelles containing 16e complexes [Os(p-cymene)(1,2-dicarba-closo-dodecarborane-1,2-diselenate/dithiolate)] encapsulated in a triblock copolymer.
Externí odkaz:
http://hdl.handle.net/10454/11234
Autor:
Barry, Nicolas P.E., Pitto-Barry, Anaïs, Sanchez, A.M., Dove, A.P., Procter, R.J., Soldevila-Barreda, Joan J., Kirby, N., Hands-Portman, I., Smith, C.J., O'Reilly, R.K., Beanland, R., Sadler, P.J.
Yes
Metal nanocrystals offer new concepts for the design of nanodevices with a range of potential applications. Currently the formation of metal nanocrystals cannot be controlled at the level of individual atoms. Here we describe a new general m
Metal nanocrystals offer new concepts for the design of nanodevices with a range of potential applications. Currently the formation of metal nanocrystals cannot be controlled at the level of individual atoms. Here we describe a new general m
Externí odkaz:
http://hdl.handle.net/10454/11231
Autor:
Saho, E., Hindmarsh, S., Sanchez, A.M., Birks, F., Kermode, J.R., Dale, M.W., Fisher, D., Beanland, R.
Publikováno v:
In Diamond & Related Materials April 2024 144
Autor:
Grant, N.E., Pain, S.L., Khorani, E., Jefferies, R., Wratten, A., McNab, S., Walker, D., Han, Y., Beanland, R., Bonilla, R.S., Murphy, J.D.
Publikováno v:
In Applied Surface Science 1 February 2024 645
Autor:
Del Pozo-Zamudio, O., Puebla, J., Krysa, A. B., Toro, R., Sanchez, A. M., Beanland, R., Tartakovskii, A. I., Skolnick, M. S., Chekhovich, E. A.
Publikováno v:
Phys. Rev. Materials 1, 034605 (2017)
We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into q
Externí odkaz:
http://arxiv.org/abs/1705.02093
Akademický článek
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Autor:
Beanland, R., Harrison, L., Khan, S., Brown, T., Roncal-Herrero, T., Peirson, H., Brown, A. P., Milne, S. J.
Publikováno v:
Journal of Applied Physics; 8/14/2023, Vol. 134 Issue 6, p1-5, 5p
Autor:
Beanland, R.1 (AUTHOR) R.Beanland@warwick.ac.uk, Harrison, L.1 (AUTHOR), Khan, S.1 (AUTHOR), Brown, T.2 (AUTHOR), Roncal-Herrero, T.2 (AUTHOR), Peirson, H.2 (AUTHOR), Brown, A. P.2 (AUTHOR), Milne, S. J.2 (AUTHOR)
Publikováno v:
Journal of Applied Physics. 8/14/2023, Vol. 134 Issue 6, p1-5. 5p.
Publikováno v:
In Diamond & Related Materials August 2021 117
Publikováno v:
In Acta Materialia December 2020 201:494-503