Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Béla Szentpáli"'
Autor:
Béla Szentpáli, István Réti, Ferenc B. Molnár, János Farkasvölgyi, Károly Kazi, Zoltán Mirk, Aurél Sonkoly, Zoltán Horváth
Publikováno v:
Active and Passive Electronic Components, Vol 2008 (2008)
An E-field probe has been developed for EMC immunity tests performed in closed space. The leads are flexible resistive transmission lines. Their influence on the field distribution is negligible. The probe has an isotropic reception from 100 MHz to 1
Externí odkaz:
https://doaj.org/article/0401dc8b2a0c49a798fd31a383e925b6
Autor:
István Bársony, Gábor Battistig, Péter Fürjes, Gábor Matyi, Béla Szentpáli, Tibor Berceli, Gergely Karolyi, Endre Laszlo
Publikováno v:
Microsystem Technologies. 18:849-856
This work is intended to describe the design aspects and to characterize the functionality of a novel thermopile structure applicable for detecting millimetre range and THz radiation. The proposed thermopile consists of a series of micromachined poly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a48738e2e539ca23bb4f7925ff6abe
https://doi.org/10.1007/s00542-011-1387-7
https://doi.org/10.1007/s00542-011-1387-7
Publikováno v:
Current Applied Physics. 6:174-178
Diode-like structures were prepared from p- and n-type Si, in which porous Si layers were sandwiched between the crystalline Si and the evaporated Al top contact. The current–voltage characteristics were investigated in that bias polarity, at which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b475c93684f94357c0f8c98621395d97
https://doi.org/10.1016/j.cap.2005.07.034
https://doi.org/10.1016/j.cap.2005.07.034
Publikováno v:
Fluctuation and Noise Letters. :L355-L364
The current-voltage characteristics and the low-frequency noise spectra of p-type Si–Porous Si–Al diode like structures were investigated. Over 1 V forward biases a reasonable fit was obtained in the Fowler-Nordheim plot. Any attempts of accurate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c9a59a8e0a66427384519ef0fcf8b2
https://doi.org/10.1142/s0219477504001951
https://doi.org/10.1142/s0219477504001951
Publikováno v:
Vacuum. 71:113-116
Cr+Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na 2 S+HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current–voltage and capacitance–voltage measurements in the temperature rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c475f5f9390c3642f0d73f5bc4e74df4
https://doi.org/10.1016/s0042-207x(02)00723-6
https://doi.org/10.1016/s0042-207x(02)00723-6
Publikováno v:
physica status solidi (c). :916-921
Cr+Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na 2 S+HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-volta ge (I-V) and capacitance-voltage measurements in the temperature r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc10ce38c9e7c7b0d43027e05e0828d1
https://doi.org/10.1002/pssc.200306225
https://doi.org/10.1002/pssc.200306225
Publikováno v:
Journal of Electronic Materials. 31:113-118
High-purity float zone (FZ) silicon p- and n-type wafers were directly bonded hydrophobically at 700°C and 1050°C. Electrical I-V and capacitance-voltage (C-V) characterization was performed on p-n junctions of 2-mm square chips cut out from proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e08b93b87161d63c55e2fb74bfd285
https://doi.org/10.1007/s11664-002-0156-x
https://doi.org/10.1007/s11664-002-0156-x
Publikováno v:
Materials Science and Engineering: B. 80:134-137
In this paper, we evaluate hydrophilic (HP) and hydrophobic (HB) surface pre-treatments in InP-to-Si direct wafer bonding. Surface roughness and surface chemistry was examined using atomic force microscopy and X-ray photoelectron spectroscopy, respec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc6fcc8e9cbbb22a7c9279e22227a14
https://doi.org/10.1016/s0921-5107(00)00626-7
https://doi.org/10.1016/s0921-5107(00)00626-7
Publikováno v:
Fluctuation and Noise Letters. :L35-L43
Photo enhanced chemical vapour deposition (PVD) of SiO 2 and Si 3 N 4 has been applied for surface passivation of specially designed n-type InP planar test resistors prepared by mesa etching on a semiinsulating InP substrate. The deposition temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383015c92629d224e4e0d57f75d0c8ea
https://doi.org/10.1142/s0219477501000159
https://doi.org/10.1142/s0219477501000159
Autor:
Roberto Mosca, Zs. J. Horváth, Béla Szentpáli, S. Franchi, Paola Frigeri, E. Gombia, A. Bosacchi, D. Pal, Vo Van Tuyen, I. Kalmár
Publikováno v:
Materials Science and Engineering: B. 80:248-251
The Schottky barrier height in Al/n-In0.35Ga0.65As was engineered using thin p-type near-interface In0.35Ga0.65As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b810229d3387ca40c069d956f915b20
https://doi.org/10.1016/s0921-5107(00)00616-4
https://doi.org/10.1016/s0921-5107(00)00616-4