Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bayron L. Murillo-Borjas"'
Publikováno v:
ACS Applied Electronic Materials. 2:3358-3365
The wide band gap and high breakdown field of β-Ga2O3 single crystals and thin films have recently attracted considerable attention not only for high-power applications, fabricating devices such as...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b64e1e40c0b4f36d26b0a2b137521a44
https://doi.org/10.1021/acsaelm.0c00643
https://doi.org/10.1021/acsaelm.0c00643
Publikováno v:
ACS Applied Materials & Interfaces. 11:27048-27056
The oxygen partial pressure during NiO deposition in reactive sputtering of a Ni target is used to control its carrier type and concentration, obtaining both n- and p-type films. Carrier concentration can be controlled, ranging from 1019 to 1014 cm-3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9358b20176ba8468e3c9b38408d16800
https://doi.org/10.1021/acsami.9b04380
https://doi.org/10.1021/acsami.9b04380
Autor:
M.I. Pintor-Monroy, Julia W. P. Hsu, Diego Barrera, F. J. Ochoa-Estrella, Bayron L. Murillo-Borjas, Manuel Quevedo-Lopez
Publikováno v:
ACS Applied Materials & Interfaces. 10:38159-38165
One of the major limitations of oxide semiconductors technology is the lack of proper p-type materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors. This limitation has resulted in an increased research focus on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c6c38c101ee90f9f79fdcbe989b7b93
https://doi.org/10.1021/acsami.8b08095
https://doi.org/10.1021/acsami.8b08095
Publikováno v:
Nano Communication Networks. 30:100376
Fast and efficient light generation and transport are at the heart of modern on-chip optical communication and information processing technologies. Next generation on-chip light sources must have a high modulation bandwidth and low energy consumption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5bdee8bb36dd87d4bee1f7ca5d6a5dc
https://doi.org/10.1016/j.nancom.2021.100376
https://doi.org/10.1016/j.nancom.2021.100376
Autor:
Maria Isabel, Pintor-Monroy, Bayron L, Murillo-Borjas, Massimo, Catalano, Manuel A, Quevedo-Lopez
Publikováno v:
ACS applied materialsinterfaces. 11(30)
The oxygen partial pressure during NiO deposition in reactive sputtering of a Ni target is used to control its carrier type and concentration, obtaining both n- and p-type films. Carrier concentration can be controlled, ranging from 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b009dff03c5a4e3b577a796a7622b9d5
https://pubmed.ncbi.nlm.nih.gov/31283171
https://pubmed.ncbi.nlm.nih.gov/31283171
Autor:
Maria Isabel, Pintor-Monroy, Diego, Barrera, Bayron L, Murillo-Borjas, Francisco Javier, Ochoa-Estrella, Julia W P, Hsu, Manuel A, Quevedo-Lopez
Publikováno v:
ACS applied materialsinterfaces. 10(44)
One of the major limitations of oxide semiconductors technology is the lack of proper p-type materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors. This limitation has resulted in an increased research focus on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::51a2dd83b1ca314c699aac5e35f50577
https://pubmed.ncbi.nlm.nih.gov/30360100
https://pubmed.ncbi.nlm.nih.gov/30360100