Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bayram Bütün"'
Publikováno v:
Sensors, Vol 16, Iss 10, p 1612 (2016)
Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorga
Externí odkaz:
https://doaj.org/article/5439f11878cb4c80ad33a02ced0c8bc7
Publikováno v:
Semiconductor Science and Technology. 38:065002
This paper reports the influence of an ultrathin 1.5 nm atomic-layer-deposited HfO2 blanket layer as a gate dielectric on GaN high-electron-mobility transistors (HEMTs) grown on a 4H-SiC substrate. Transistors with a gate length of 250 nm and a sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f656a96e3f98f233d73e7c03486d9c85
https://doi.org/10.1088/1361-6641/accc4e
https://doi.org/10.1088/1361-6641/accc4e
Publikováno v:
Optics express. 22(12)
We fabricated UVB filtered TiO₂ MSM photodetectors by the localized surface plasmon resonance effect. A plasmonic filter structure was designed using FDTD simulations. Final filter structure was fabricated with Al nano-cylinders with a 70 nm radius
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a30d3cce0b22db320cc595d1b258165b
https://pubmed.ncbi.nlm.nih.gov/24977507
https://pubmed.ncbi.nlm.nih.gov/24977507
Autor:
Gokhan Kurt, Melisa Ekin Gulseren, Gurur Salkim, Sertac Ural, Omer Ahmet Kayal, Mustafa Ozturk, Bayram Butun, Mehmet Kabak, Ekmel Ozbay
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment du
Externí odkaz:
https://doaj.org/article/5f220c2dc96e4d1191d32b2a27c4b853
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Abstract In this paper, we propose a facile route to fabricate a metal insulator multilayer stack to obtain ultra-broadband, wide angle behavior from the structure. The absorber, which covers near infrared (NIR) and visible (Vis) ranges, consists of
Externí odkaz:
https://doaj.org/article/27462f060e2c4c22b79f15a2743f8a08
Autor:
Ahmet Toprak, Sinan Osmanoğlu, Mustafa Öztürk, Doğan Yılmaz, Ömer Cengiz, Özlem Şen, Bayram Bütün, Şadan Özcan, Ekmel Özbay
Publikováno v:
Semiconductor Science & Technology; Dec2018, Vol. 33 Issue 12, p1-1, 1p