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pro vyhledávání: '"Bayram, S. B."'
Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating. The frequency and voltage dependent dielectric constant of Al/MA/p-Si have been investigated. Dielectric properties and electrical
Externí odkaz:
http://arxiv.org/abs/1604.07789
Autor:
Bayram, S. B., Freamat, M. V.
When optically excited, iodine absorbs in the 490- to 650-nm visible region of the spectrum and, after radiative relaxation, it displays an emission spectrum of discrete vibrational bands at moderate resolution. This makes laser-induced fuorescence s
Externí odkaz:
http://arxiv.org/abs/1507.02600
We describe an inexpensive instructional experiment that demonstrates the rotational energy levels of diatomic nitrogen, using the emission band spectrum of molecular nitrogen ionized by various processes in a commercial AC capillary discharge tube.
Externí odkaz:
http://arxiv.org/abs/1504.05510
Publikováno v:
Phys. Rev. A 90, 062510 (2014)
Measurements of hyperfine polarization quantum beats are used determine the magnetic dipole (A) and electric quadrupole (B) coupling constants in the excited atomic Cs 8p level. The experimental approach is a novel combination of pulsed optical pumpi
Externí odkaz:
http://arxiv.org/abs/1409.0290
Publikováno v:
Journal of Applied Physics; 8/1/2002, Vol. 92 Issue 3, p1613, 6p, 2 Diagrams, 1 Chart, 4 Graphs
Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating. The frequency and voltage dependent dielectric constant of Al/MA/p-Si have been investigated. Dielectric properties and electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_____10046::fa48c60072c84ae4ce7cbe2766443093
https://avesis.gazi.edu.tr/publication/details/8a5b0b43-f838-4a08-b77a-c3fa25b8b0c6/oai
https://avesis.gazi.edu.tr/publication/details/8a5b0b43-f838-4a08-b77a-c3fa25b8b0c6/oai
Publikováno v:
Scopus-Elsevier
Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating. The frequency and voltage dependent dielectric constant of Al/MA/p-Si have been investigated. Dielectric properties and electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c205fc716a37d48799f852b632bd97c1
http://arxiv.org/abs/1604.07789
http://arxiv.org/abs/1604.07789
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Akademický článek
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Publikováno v:
American Journal of Physics; Oct2015, Vol. 83 Issue 10, p867-872, 6p