Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Bayot, Vincent"'
Autor:
Pala, Marco, Sellier, Hermann, Hackens, Benoit, Martins, Frederico, Bayot, Vincent, Huant, Serge
Publikováno v:
Nanoscale Res. Lett. 7, 472 (2012)
The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a new route to a congested network in an attempt to relieve congestion can counter-intuitively degrade the overall network performance. Recently, we have
Externí odkaz:
http://arxiv.org/abs/1208.0955
Autor:
Tang, Xiaohui, Reckinger, Nicolas, Bayot, Vincent, Krzeminski, Christophe, Dubois, Emmanuel, Villaret, Alexandre, Bensahel, Daniel
Publikováno v:
IEEE Transaction on Nanotechnology 5, 6 (2006) p. 649
Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In
Externí odkaz:
http://arxiv.org/abs/1109.2921
Autor:
Krzeminski, Christophe, Dubois, Emmanuel, Tang, Xiaohui, Reckinger, Nicolas, Crahay, André, Bayot, Vincent
Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidati
Externí odkaz:
http://arxiv.org/abs/1109.2927
Publikováno v:
IEEE Transactions On Nanotechnology 8, 9 (2009) 737-748
This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was to clarify
Externí odkaz:
http://arxiv.org/abs/1106.4289
Autor:
Sellier, Hermann, Hackens, Benoit, Pala, Marco, Martins, Frederico, Baltazar, Samuel, Wallart, Xavier, Desplanque, Ludovic, Bayot, Vincent, Huant, Serge
Publikováno v:
Semicond. Sci. Technol. 26, 064008 (2011)
This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selecti
Externí odkaz:
http://arxiv.org/abs/1104.2032
Autor:
Tang, Xiaohui, Jonas, Alain M., Nysten, Bernard, Demoustier-Champagne, Sophie, Blondeau, Franoise, Prévot, Pierre-Paul, Pampin, Rémi, Godfroid, Edmond, Iñiguez, Benjamin, Colinge, Jean-Pierre, Raskin, Jean-Pierre, Flandre, Denis, Bayot, Vincent
Publikováno v:
In Biosensors and Bioelectronics 2009 24(12):3531-3537
Autor:
Bednarz, Lukasz, Rashmi, Hackens, Benoît, Farhi, Ghania, Bayot, Vincent, Huynen, Isabelle, Galloo, Jean-Sébastien, Roelens, Yannick, Bollaert, Sylvain, Cappy, Alain
Publikováno v:
In Microelectronic Engineering 2005 81(2):194-200
Publikováno v:
In Solid State Communications 2005 134(3):217-222
Autor:
Reckinger, Nicolas, Tang, Xiaohui, Bayot, Vincent, Yarekha, Dmitri A., Dubois, Emmanuel, Godey, Sylvie, Wallart, Xavier, Larrieu, Guilhem, Łaszcz, Adam, Ratajczak, Jacek, Jacques, Pascal J., Raskin, Jean-Pierre
Publikováno v:
Journal of Applied Physics; Nov2008, Vol. 104 Issue 10, p103523, 9p, 1 Black and White Photograph, 4 Diagrams, 7 Graphs
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