Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Bay, H.L"'
Publikováno v:
In Journal of Crystal Growth 2007 298:413-417
Publikováno v:
In Thin Solid Films 1 June 2000 368(1):15-21
Publikováno v:
In Thin Solid Films 2000 371(1):66-71
Autor:
Zhao, Q.T., Bay, H.L., Zimmermann, S., Wiemer, M., Kaufmann, C., Trui, B., Höhnemann, H., Dudek, V., Mantl, S.
A silicon-on-metal-on-insulator substrate, consisting of a top Si layer, a buried COSi2 layer and a buried SiO2 layer on a Si (100) substrate was formed using Co silicidation, wafer bonding and wafer splitting. It is shown that the buried silicide la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::cc5ada9c6bb3b69d8216fd305f1f9f78
https://publica.fraunhofer.de/handle/publica/211300
https://publica.fraunhofer.de/handle/publica/211300
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Oxidation of CoSi2 layers on Si~100! using oxidation masks has been investigated. It is shown that local oxidation can be used to pattern the silicide layer. This method allows the formation of buried interconnects and metallized silicon mesa structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::8a013bd08e0743c762c5d5ccfbe54e72
Publikováno v:
ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference; 1995, p667-670, 4p
Autor:
Hardtdegen, H., Steins, R., Kaluza, N., Cho, Y.S., Wirtz, K., von der Ahe, M., Bay, H.L., Heidelberger, G., Marso, M.
Publikováno v:
Applied Physics A: Materials Science & Processing; Jun2007, Vol. 87 Issue 3, p491-498, 8p, 4 Diagrams, 1 Chart, 8 Graphs
Publikováno v:
Thin Solid Films; June 2000, Vol. 368 Issue: 1 p15-21, 7p
Publikováno v:
Microelectronic Engineering; 2000, Vol. 50 Issue: 1 p243-248, 6p
Publikováno v:
Thin Solid Films; December 1994, Vol. 253 Issue: 1-2 p485-489, 5p