Zobrazeno 1 - 10 of 43 pro vyhledávání: '"Baxter Moody"'
1
Akademický článek
Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs
Autor: Dong Liu, Sang June Cho, Huilong Zhang, Corey R. Carlos, Akhil R. K. Kalapala, Jeongpil Park, Jisoo Kim, Rafael Dalmau, Jiarui Gong, Baxter Moody, Xudong Wang, John D. Albrecht, Weidong Zhou, Zhenqiang Ma
Publikováno v: AIP Advances, Vol 9, Iss 8, Pp 085128-085128-6 (2019)
We investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology
Externí odkaz: https://doaj.org/article/90b50bba57e543f78a4e133449b42ccc
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2
Akademický článek
P-type silicon as hole supplier for nitride-based UVC LEDs
Autor: Sang June Cho, Dong Liu, Jung-Hun Seo, Rafael Dalmau, Kwangeun Kim, Jeongpil Park, Jiarui Gong, Deyin Zhao, Fei Wang, Xin Yin, Yei Hwan Jung, In-Kyu Lee, Munho Kim, Xudong Wang, John D. Albrecht, Weidong Zhou, Baxter Moody, Zhenqiang Ma
Publikováno v: New Journal of Physics, Vol 21, Iss 2, p 023011 (2019)
The ineffective p-type doping of nitrides using magnesium (Mg), the best available dopant, has limited the development and performance of all III-nitride-based devices, including bipolar junction transistors and light emitting diodes (LEDs). For nitr
Externí odkaz: https://doaj.org/article/c5124d0c5e17473090c3b1ecc470f34f
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4
High p-conductivity in AlGaN enabled by polarization field engineering
Autor: Shashwat Rathkanthiwar, Pramod Reddy, Baxter Moody, Cristyan Quiñones-García, Pegah Bagheri, Dolar Khachariya, Rafael Dalmau, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Publikováno v: Applied Physics Letters. 122:152105
High p-conductivity (0.7 Ω−1 cm−1) was achieved in high-Al content AlGaN via Mg doping and compositional grading. A clear transition between the valence band and impurity band conduction mechanisms was observed. The transition temperature depend
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::52d49b474f621d4f199f5942d2086bcc
https://doi.org/10.1063/5.0143427
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5
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Autor: Dong Liu, Weidong Zhou, Zhenqiang Ma, Baxter Moody, John D. Albrecht, Deyin Zhao, Akhil Raj Kumar Kalapala, Sang June Cho, Jeongpil Park
Publikováno v: Opto-Electronic Advances, Vol 3, Iss 4, Pp 190025-1-190025-6 (2020)
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fffdd9537b0e8f65ca7e8f10be00175
https://doi.org/10.29026/oea.2020.190025
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6
High conductivity and low activation energy in p-type AlGaN
Autor: Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Seiji Mita, Cristyan Quiñones-García, Yan Guan, Baxter Moody, Pramod Reddy, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Publikováno v: Applied Physics Letters. 122:092103
Record-low p-type resistivities of 9.7 and 37 Ω cm were achieved in Al0.7Ga0.3N and Al0.8Ga0.2N films, respectively, grown on single-crystal AlN substrate by metalorganic chemical vapor deposition. A two-band conduction model was introduced to expla
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::645de5ac74a51054044d11c6560ec1d4
https://doi.org/10.1063/5.0141863
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7
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Autor: Dolar Khachariya, Shane Stein, Will Mecouch, M. Hayden Breckenridge, Shashwat Rathkanthiwar, Seiji Mita, Baxter Moody, Pramod Reddy, James Tweedie, Ronny Kirste, Kacper Sierakowski, Grzegorz Kamler, Michal Bockowski, Erhard Kohn, Spyridon Pavlidis, Ramón Collazo, Zlatko Sitar
Publikováno v: Applied Physics Express. 15:101004
We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c31e55f36315ed8f51b8310ff4ed154d
https://doi.org/10.35848/1882-0786/ac8f81
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8
On the conduction mechanism in compositionally graded AlGaN
Autor: Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Ji Hyun Kim, Yasutomo Kajikawa, Pramod Reddy, Seiji Mita, Ronny Kirste, Baxter Moody, Ramon Collazo, Zlatko Sitar
Publikováno v: Applied Physics Letters. 121:072106
A two-band transport model is proposed to explain electrical conduction in graded aluminum gallium nitride layers, where the free hole conduction in the valence band is favored at high temperatures and hopping conduction in the impurity band dominate
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19a5f80148939d7108555f9a2e69a637
https://doi.org/10.1063/5.0100756
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10
(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates
Autor: Rafael Dalmau, Baxter Moody
Publikováno v: ECS Transactions. 86:31-40
Compositionally graded AlxGa1-xN epilayers were coherently grown on AlN single crystal substrates by MOCVD, and polarization-induced doping was determined by contactless sheet resistance and capacitance-voltage measurements on unintentionally doped,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::04042a7f8f22715a3e68c984476fe1c1
https://doi.org/10.1149/08612.0031ecst
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