Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Baukje Wisse"'
Autor:
Moo-Young Seo, Dong-Gyu Park, Baukje Wisse, Yvon Chai, Jong-Mun Jeong, Jin-Moo Byun, Stefan Geerte Kruijswijk, Wei Guo, Hugo Augustinus Joseph Cramer, Thomas Theeuwes, Sharon Hsu, Steven Welch, Rui Zhang, Alok Verma, Giacomo Miceli, Sang-Hoon Jung, Rahul Khandelwal, Taeddy Kim, Hyun-Sok Kim, Yi Song, Kyu-Tae Sun
Publikováno v:
SPIE Proceedings.
The high-NA angle-resolved scatterometer YieldStar 1250D, with a small 12x12μm2 inspection area, has been used to inspect CD variation After Develop (ADI) and After Partition/Final Etch (APEI/AFEI) on various layers and features of a HVM DRAM proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee6ab7b87a96f62e6e077e7d07301ae
https://doi.org/10.1117/12.2220782
https://doi.org/10.1117/12.2220782
Autor:
Jongsu Lee, Steven Welch, Byounghoon Lee, Giacomo Miceli, Rui Zhang, Jin-Moo Byun, Stefan Geerte Kruijswijk, Sangjun Han, Noh-Jung Kwak, Kyu-Tae Sun, Won-Kwang Ma, Thomas Theeuwes, Young-Sik Kim, Sharon Hsu, Hugo Augustinus Joseph Cramer, Baukje Wisse, Yvon Chai, Yi Song, Alok Verma, Wei Guo
Publikováno v:
SPIE Proceedings.
Spacer multi patterning process continues to be a key enabler of future design shrinks in DRAM and NAND process flows. Improving Critical Dimension Uniformity (CDU) for main features remains high priority for multi patterning technology and requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::722c7c1779e899d45577382faa799c83
https://doi.org/10.1117/12.2219664
https://doi.org/10.1117/12.2219664
Autor:
Baukje Wisse, Carsten Kohler, Stefan Hunsche, Jeroen Meessen, Paul van Adrichem, Tjitte Nooitgedagt, Peter Nikolsky
Publikováno v:
ECS Transactions. 18:357-366
Double Dipole (DDL), Double Patterning (DP), Spacers and other advanced process technologies require an enormous amount of CD and tool data collection and development time for OPC modeling. In this paper we studied a way to reduce the overall OPC pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::691c744019ba45219c5c565a4a844430
https://doi.org/10.1149/1.3096472
https://doi.org/10.1149/1.3096472
Autor:
Maryana Escalante Marun, Steven Welch, Frank Staals, Stuart Young, Stefan Geerte Kruijswijk, Stefan Petra, Bart Segers, Arie Jeffrey Den Boef, Bastiaan Onne Fagginger Auer, Wei Guo, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen, Christian Marinus Leewis, Henk-Jan H. Smilde, Baukje Wisse
Publikováno v:
SPIE Proceedings.
The continuing trend of shrinking dimension and the related specifications requires tightening of control loops. To support the tighter control loops, the metrology sampling plans will require increasing sampling density and frequency. This study sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::543633219245caa6e295387c0d4b60ad
https://doi.org/10.1117/12.2085957
https://doi.org/10.1117/12.2085957
Autor:
Remco Dirks, Ethan Chiu, Henk Niesing, Baukje Wisse, Stefan Geerte Kruijswijk, Reinder Teun Plug, Bijoy Rajasekharan, Mariya Ponomarenko, Sylvia Yuan, Marlene Strobl, Platt Hung, Noelle Wright, Wilhelm Tsai, Vincent Couraudon, David Huang, Thomas M. Chen, Henry Chen, Paul K. L. Yu, Yi Song, Frida Liang, Andy Lan, Alan Wang, Wilson Hsu, Hugo Augustinus Joseph Cramer
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Integrated metrology in the lithography cluster is a promising solution to tighten process control. It is shown that optical CD metrology using YieldStar, an angular resolved scatterometer, meets all requirements in terms of precision, process robust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8494e48a6e6ed8de43718353dbe049e0
https://doi.org/10.1117/12.2047205
https://doi.org/10.1117/12.2047205
Autor:
Shaunee Cheng, Philippe Leray, Christine Corinne Mattheus, Hugo Augustinus Joseph Cramer, Henk Niesing, Anne-Laure Charley, Baukje Wisse, Wouter Pypen, Alok Verma, Stefan Geerte Kruijswijk
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Monitoring and control of the various processes in the semiconductor require precise metrology of relevant features. Optical Critical Dimension metrology (OCD) is a non-destructive solution, offering the capability to measure profiles of 2D and 3D fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8c771e1f1cbda5897e0dcb84c700f73
https://doi.org/10.1117/12.2047280
https://doi.org/10.1117/12.2047280
Autor:
Jo Finders, Ingrid Minnaert-Janssen, Rachel Ren, Paul Frank Luehrmann, Ryan Gibson, Craig Hickman, Frank Duray, Robert Kazinczi, Nicole Schoumans, Lior Shoval, Baukje Wisse, Yair Elblinger, Yaron Cohen, Liesbeth Reijnen, Michael Ben-Yishai, Merri L. Carlson, Dan Rost, Ilan Englard, Shmoolik Mangan, Thomas Theeuwes, Michael B. Garrett, Erik Byers
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The extension of ArF lithography through reduced k1, immersion and double patterning techniques makes lithography a difficult challenge. Currently, the concept of simple linear flow from design to functional photo-mask is being replaced by a more com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09beb6c4e2e408b2fde8044c3d974ad8
https://doi.org/10.1117/12.815415
https://doi.org/10.1117/12.815415
Autor:
Baukje Wisse, Paul van Adrichem, Stefan Hunsche, Peter Nikolsky, Carsten Kohler, Jeroen Meessen, Tjitte Nooitgedagt
Publikováno v:
Photomask Technology 2008.
Double Patterning (DP), Spacers and other advanced Litho technologies require an enormous amount of CD and tool data collection and development time for Optical Proximity Correction (OPC) modeling. Unfortunately this process could be started typicall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a7329147677937913359b9ffea3bb0
https://doi.org/10.1117/12.802204
https://doi.org/10.1117/12.802204