Zobrazeno 1 - 10
of 355
pro vyhledávání: '"Bauelemente"'
Autor:
Busse, Daniel, Empelmann, Martin
Das Prinzip „Leicht Bauen mit Beton“ kann durch stabförmige Bauelemente außerordentlich gut umgesetzt werden, da einwirkende Beanspruchungen konzentriert und optimiert aufgenommen werden können. Stabförmige Bauelemente gehören zu den maßgeb
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A79998
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https://tud.qucosa.de/api/qucosa%3A79998/attachment/ATT-0/
Autor:
Tang, Tianyu, Dacha, Preetam, Haase, Katherina, Kreß, Joshua, Hänisch, Christian, Perez, Jonathan, Krupskaya, Yulia, Tahn, Alexander, Pohl, Darius, Schneider, Sebastian, Talnack, Felix, Hambsch, Mike, Reineke, Sebastian, Vaynzof, Yana, Mannsfeld, Stefan C. B.
Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A90989
https://tud.qucosa.de/api/qucosa%3A90989/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A90989/attachment/ATT-0/
Autor:
Ascoli, Alon, Menzel, Stephan, Rana, Vikas, Kempen, Tim, Messaris, Ioannis, Demirkol, Ahmet Samil, Schulten, Michael, Siemon, Anne, Tetzlaff, Ronald
The multidisciplinary field of memristors calls for the necessity for theoreticallyinclined researchers and experimenters to join forces, merging complementary expertise and technical know-how, to develop and implement rigorous and systematic techniq
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A88339
https://tud.qucosa.de/api/qucosa%3A88339/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A88339/attachment/ATT-0/
Autor:
Winkler, Felix, Pešić, Milan, Richter, Claudia, Hoffmann, Michael, Mikolajick, Michael, Bartha, Johann W.
So far, only CMOS compatible and scalable hafnia-zirconia (HZO) based ferroelectric (FE) n-FeFETs have been reported. To enable the full ferroelectric hierarchy [1] both p- and n-type devices should be available. Here we report a p-FeFET with a large
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A77564
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https://tud.qucosa.de/api/qucosa%3A77564/attachment/ATT-0/
Autor:
Henschke, Andre
Single-Photon Avalanche Diode-based Direct Time of Flight systems are currently attracting much attention due to the need for optical systems with high temporal and spatial resolution, high frame rates, range, and high ambient light rejection for aut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32fe3cd8ccee723aeb64d0e646afef22
https://duepublico2.uni-due.de/servlets/MCRFileNodeServlet/duepublico_derivate_00078133/Diss_Henschke.pdf
https://duepublico2.uni-due.de/servlets/MCRFileNodeServlet/duepublico_derivate_00078133/Diss_Henschke.pdf
Autor:
Hengge, Michael
Organische Leuchtdioden weisen, verglichen mit anorganischen Leuchtdioden, viele Vorteile auf. So sind sie nicht nur energiesparender, sondern können auch in neuen flexiblen Technologien verwendet werden. Um ihr volles Potenzial auszuschöpfen, kön
Externí odkaz:
http://edoc.hu-berlin.de/18452/27352
Autor:
O'Connor, Ian, Cantan, Mayeul, Marchand, Cédric, Vilquin, Bertrand, Slesazeck, Stefan, Breyer, Evelyn T., Mulaosmanovic, Halid, Mikolajick, Thomas, Giraud, Bastien, Noël, Jean-Philippe, Ionescu, Adrian, Igor, Igor
Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A76920
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https://tud.qucosa.de/api/qucosa%3A76920/attachment/ATT-0/
Publikováno v:
ECN: Electronic Component News. May2019, Vol. 63 Issue 4, p34-34. 1/4p.
Recently, the proposal to use voltage amplification from ferroelectric negative capacitance (NC) to reduce the power dissipation in nanoelectronic devices has attracted significant attention. Homogeneous Landau theory predicts, that by connecting a f
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81337
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https://tud.qucosa.de/api/qucosa%3A81337/attachment/ATT-0/
This letter discusses a feasible variant of vertically integrated reconfigurable field effect transistors (RFET) based on top-down nanowires. The structures were studied by 3-D device simulations. Subdividing the structure into two vertical pillars a
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A76767
https://tud.qucosa.de/api/qucosa%3A76767/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A76767/attachment/ATT-0/