A 70-GHz- fT double-polysilicon SiGe HBT using a non selective epitaxial growth

Autor: Baudry, H ^*, Fellous, C, Martinet, B, Romagna, F, Marty, M, Mourier, J, Troillard, G, Laurens, M, Monroy, A, Dutartre, D, Chantre, A

Publikováno v: In Materials Science & Engineering B 2002 89(1):21-25

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Suppression of boron transient-enhanced diffusion In SiGe HBTs by a burried carbon layer

Autor: Jouan, S., Baudry, H., Dutartre, D., Fellous, C., Laurens, M., Lenoble, D., Marty, M., Monroy, A., Perrotin, A., Ribot, P., Vincent, G., Chantre, A.

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2001, pp.Vol 48, n8, 2001
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2001, pp.Vol 48, n8, 2001

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Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7b9ff9a5038bfb44331ca1c7916b9be7
https://hal.science/hal-00494524

BiCMOS7RF: a highly-manufacturable 0.25-μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy.

Autor: Baudry, H., Szelag, B., Deleglise, F., Laurens, M., Mourier, J., Saguin, F., Troillard, G., Chantre, A., Monroy, A.

Publikováno v: Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003; 2003, p207-210, 4p

An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter.

Autor: Martinet, B., Romagna, F., Kermarrec, O., Campidelli, Y., Saguin, F., Baudry, H., Marty, M., Dutartre, D., Chantre, A.

Publikováno v: Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting; 2002, p147-150, 4p