Zobrazeno 1 - 10
of 268
pro vyhledávání: '"Batude, P."'
Autor:
Deprat, Fabien, Nemouchi, F., Fenouillet-Beranger, C., Batude, P., Previtali, B., Danielou, M., Rodriguez, P., Favier, S., Fournier, C., Gergaud, P., Vinet, M.
Publikováno v:
AMC 2015 – Advanced Metallization Conference
3D VLSI with a CoolCube TM process allows vertically stacking several layers of devices with a unique connecting via density above a million/mm2. The thermal budget allowed to process the top transistor is currently limited by NiPt silicide stability
Autor:
Bosch, D., Alba, P. Acosta, Kerdiles, S., Benevent, V., Perrot, C., Lassarre, J., Richy, J., Lacord, J., Sklenard, B., Brunet, L., Batude, P., Fenouillet-Beranger, C., Lattard, D., Colinge, J. P., Balestra, F., Andrieu, F.
To take fully advantage of Junctionless transistor (JLT) low-cost and low-temperature features we investigate a 475 degC process to create onto a wafer a thin poly-Si layer on insulator. We fabricated a 13nm doped (Phosphorous, 1E19 at/cm3) poly-sili
Externí odkaz:
http://arxiv.org/abs/2011.15061
Autor:
Boutayeb, A., Theodorou, C., Golanski, D., Batude, P., Brunet, L., Bosch, D., Guyader, F., Joblot, S., Ponthenier, F., Lacord, J.
Publikováno v:
In Solid State Electronics November 2023 209
Autor:
Bosch, D., Garros, X., Makosiej, A., Ciampolini, L., Weber, O., Lacord, J., Cluzel, J., Giraud, B., Berthelon, R., Cibrario, G., Brunet, L., Batude, P., Fenouillet-Béranger, C., Lattard, D., Colinge, J.P., Balestra, F., Andrieu, F.
Publikováno v:
In Solid State Electronics June 2020 168
Publikováno v:
In Solid State Electronics June 2020 168
Autor:
Diaz Llorente, C., Le Royer, C., Batude, P., Fenouillet-Beranger, C., Martinie, S., Lu, C.-M.V., Allain, F., Colinge, J.-P., Cristoloveanu, S., Ghibaudo, G., Vinet, M.
Publikováno v:
In Solid State Electronics June 2018 144:78-85
Publikováno v:
Technologies, Vol 10, Iss 2, p 38 (2022)
In this paper, we present a thorough analysis of parasitic coupling effects between different electrodes for a 3D Sequential Integration circuit example comprising stacked devices. More specifically, this study is performed for a Back-Side Illuminate
Externí odkaz:
https://doaj.org/article/41ebbdc9c9b745698489d7fe1b25f5c1
Akademický článek
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Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 March 2016 370:14-18
Autor:
Fenouillet-Beranger, C., Previtali, B., Batude, P., Nemouchi, F., Cassé, M., Garros, X., Tosti, L., Rambal, N., Lafond, D., Dansas, H., Pasini, L., Brunet, L., Deprat, F., Grégoire, M., Mellier, M., Vinet, M.
Publikováno v:
In Solid State Electronics November 2015 113:2-8