Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Batsanov SA"'
Autor:
Milekhin IA; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany., Anikin KV; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Rahaman M; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany., Rodyakina EE; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Duda TA; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Saidzhonov BM; Department of Chemistry, Moscow State University, Moscow, Russia., Vasiliev RB; Department of Chemistry, Moscow State University, Moscow, Russia., Dzhagan VM; V.E. Lashkaryov Institute of Semiconductor Physics, UA-03028 Kiev, Ukraine., Milekhin AG; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Batsanov SA; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Gutakovskii AK; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Latyshev AV; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia., Zahn DRT; Semiconductor Physics, Chemnitz University of Technology, Chemnitz, Germany.
Publikováno v:
The Journal of chemical physics [J Chem Phys] 2020 Oct 28; Vol. 153 (16), pp. 164708.