Zobrazeno 1 - 10
of 140
pro vyhledávání: '"Batko, I."'
Publikováno v:
Solid State Communications, Volume 150, Issues 13-14, April 2010, Pages 652-654
We report about influence of external pressure on electrical resistivity of EuB5.99C0.01, the compound believed to be intrinsically inhomogeneous due to fluctuation of carbon content. Our results show that the low-temperature resistivity maximum shif
Externí odkaz:
http://arxiv.org/abs/2010.10848
Publikováno v:
Volume 141, Issue 7, February 2007, Pages 412-415
We report electron tunneling spectroscopy studies on single crystalline FeSi sample performed for the case of homogeneous tunnel junction contacts and for the case of counter electrodes made from Pt-Rh alloy. Our results reveal that while the tunneli
Externí odkaz:
http://arxiv.org/abs/2010.10838
Autor:
Batko, I., Batkova, M.
Publikováno v:
Materials Letters, Volume 236, 1 February 2019, Pages 260-263
We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in an impurity band of valence fluctuating semiconductors both occupied and unoccupied sites can be found in the impurity band above as well as
Externí odkaz:
http://arxiv.org/abs/1807.08519
Autor:
Batkova, M., Batko, I.
We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in the impurity band of SmB6, energies of electrons occupying impurity sites can be due to the uncertainty principle only estimated with corresp
Externí odkaz:
http://arxiv.org/abs/1608.02356
Autor:
Batko, I., Batkova, M.
Publikováno v:
Eur. Phys. J. Appl. Phys. (2012) 58: 20102
We demonstrate that memristive devices can be fabricated by tip-induced oxidation of thin metallic films using atomic force microscope. Electrical measurements of such prepared Ti/TiOx/Ti test structures confirmed their memristive behavior and inferr
Externí odkaz:
http://arxiv.org/abs/1106.5006
Autor:
Batko, I., Batkova, M.
Publikováno v:
Solid State Communications Volume 196, October 2014, Pages 18-23
We advert to the fact that presence of valence fluctuations (VFs) in semiconductors with in-gap impurity bands unconditionally leads to dynamical changes (fluctuations) of energies of localized impurity states. We provide arguments that in the impuri
Externí odkaz:
http://arxiv.org/abs/0710.1159
Autor:
Batkova, M., Batko, I., Flachbart, K., Jurek, K., Konovalova, E. S., Kovac, J., Reiffers, M., Sechovsky, V., Shitsevalova, N., Santava, E., Sebek, J.
Publikováno v:
Physical Review B 78, 224414 (2008)
We present results of measurements of electrical, magnetic and thermal properties of EuB$_{5.99}$C$_{0.01}$. The observed anomalously large negative magnetoresistance as above, so below the Curie temperature of ferromagnetic ordering $T_C$ is attribu
Externí odkaz:
http://arxiv.org/abs/0706.0091
Autor:
Batko, I., Batkova, M.
Publikováno v:
Eur. Phys. J. Appl. Phys., Vol. 31 (2005) 191-194
We have proposed novel calorimetric tunneling (CT) experiment allowing exact determination of heat generation (or heat sinking) in individual tunnel junction (TJ) electrodes which opens new possibilities in the field of design and development of expe
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402336
Autor:
Lauda, M., Füzer, J., Kollár, P., Strečková, M., Bureš, R., Kováč, J., Baťková, M., Baťko, I.
Publikováno v:
In Journal of Magnetism and Magnetic Materials 1 August 2016 411:12-17
