Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Bathen, Marianne"'
Autor:
Žalandauskas, Vytautas, Silkinis, Rokas, Vines, Lasse, Razinkovas, Lukas, Bathen, Marianne Etzelmüller
Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. In this work, first-principles calculations were employed using the r2S
Externí odkaz:
http://arxiv.org/abs/2412.01390
Autor:
Silkinis, Rokas, Maciaszek, Marek, Žalandauskas, Vytautas, Bathen, Marianne Etzelmüller, Vines, Lasse, Alkauskas, Audrius, Razinkovas, Lukas
In this work, we present a first-principles density functional theory (DFT) computational investigation of the luminescence and absorption lineshapes associated with the neutral carbon-oxygen interstitial pair (CiOi) defect in silicon. We obtain the
Externí odkaz:
http://arxiv.org/abs/2410.22158
Autor:
Jousseaume, Yann, Kumar, Piyush, Bathen, Marianne Etzelmüller, Cauwet, François, Grossner, Ulrike, Ferro, Gabriel
Publikováno v:
International conference on silicon carbide and related materials 2023, Sep 2023, Sorrento (Italie), Italy. pp.7-12
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading difficulties were observed in the case of trench-patterned samples while
Externí odkaz:
http://arxiv.org/abs/2410.07680
Autor:
Martins, Maria M., Kumar, Piyush, Bathen, Marianne E., Salman, Zaher, Grossner, Ulrike, Prokscha, Thomas
Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that the formation of the anisot
Externí odkaz:
http://arxiv.org/abs/2405.18211
Autor:
Kumar, Piyush, Martins, Maria Inês Mendes, Bathen, Marianne Etzelmüller, Woerle, Judith, Prokscha, Thomas, Grossner, Ulrike
Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage the capabili
Externí odkaz:
http://arxiv.org/abs/2211.10252
Autor:
Hebnes, Oliver Lerstøl, Bathen, Marianne Etzelmüller, Schøyen, Øyvind Sigmundson, Larsen, Sebastian G. Winther, Vines, Lasse, Hjorth-Jensen, Morten
Semiconductor materials provide a compelling platform for quantum technologies (QT), and the properties of a vast amount of materials can be found in databases containing information from both experimental and theoretical explorations. However, searc
Externí odkaz:
http://arxiv.org/abs/2203.16203
Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signature
Externí odkaz:
http://arxiv.org/abs/2111.01011
Autor:
Bathen, Marianne Etzelmüller, Kumar, Piyush, Ghezellou, Misagh, Belanche, Manuel, Vines, Lasse, Ul-Hassan, Jawad, Grossner, Ulrike
Publikováno v:
In Materials Science in Semiconductor Processing July 2024 177
Autor:
Bathen, Marianne Etzelmüller, Karsthof, Robert, Galeckas, Augustinas, Kumar, Piyush, Kuznetsov, Andrej Yu., Grossner, Ulrike, Vines, Lasse
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2024 176
Autor:
Lemva Ousdal, Erlend, Etzelmüller Bathen, Marianne, Galeckas, Augustinas, Kuznetsov, Andrej, Vines, Lasse
Publikováno v:
Journal of Applied Physics; 6/14/2024, Vol. 135 Issue 22, p1-9, 9p