Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Bastien Jovet"'
Publikováno v:
Journal of Non-Crystalline Solids. 358:3396-3402
Very high effective minority carrier lifetime (6.3 ms) and very low surface recombination velocity (2.6 cm/s) have been demonstrated on float-zone 1–2 Ω cm crystalline silicon (c-Si) wafers by depositing a-Si:H films using grid-biased remote radio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::631b5056f4881c6547b7e73c0130b2d3
https://doi.org/10.1016/j.jnoncrysol.2012.08.015
https://doi.org/10.1016/j.jnoncrysol.2012.08.015
Autor:
Pratish Mahtani, Christophe Longeaud, Nazir P. Kherani, Bastien Jovet, Renaud Varache, Jean-Paul Kleider
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2013, 114 (12), pp.124503-124503-10. ⟨10.1063/1.4821235⟩
Journal of Applied Physics, 2013, 114 (12), pp.124503-124503-10. ⟨10.1063/1.4821235⟩
Journal of Applied Physics, American Institute of Physics, 2013, 114 (12), pp.124503-124503-10. ⟨10.1063/1.4821235⟩
Journal of Applied Physics, 2013, 114 (12), pp.124503-124503-10. ⟨10.1063/1.4821235⟩
LGEP 2013 ID = 1419; International audience; The photostability of the amorphous--crystalline silicon heterointerface is investigated. It is revealed that the metastability of hydrogenated amorphous silicon (a-Si:H) causes significant light induced c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aa0edef3b5176a564551c197d334dba
https://hal-supelec.archives-ouvertes.fr/hal-00931270
https://hal-supelec.archives-ouvertes.fr/hal-00931270
