Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Bastien Bonef"'
Autor:
Eamonn T. Hughes, Gunnar Kusch, Jennifer Selvidge, Bastien Bonef, Justin Norman, Chen Shang, John E. Bowers, Rachel A. Oliver, Kunal Mukherjee
Publikováno v:
physica status solidi (a).
Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga)N Alloy Quantum Barriers
Autor:
Cheyenne Lynsky, Guillaume Lheureux, Bastien Bonef, Kai Shek Qwah, Ryan C. White, Steven P. DenBaars, Shuji Nakamura, Yuh-Renn Wu, Claude Weisbuch, James S. Speck
Publikováno v:
Physical Review Applied. 17
Autor:
Eamonn T. Hughes, Bastien Bonef, Brian B. Haidet, John E. Bowers, Justin Norman, Jennifer Selvidge, Chen Shang, Kunal Mukherjee
Publikováno v:
Microscopy and Microanalysis. 27:908-910
Autor:
Abdullah S. Almogbel, Feng Wu, Bastien Bonef, James S. Speck, Michael Iza, Shuji Nakamura, Burhan K. Saifaddin, Steven P. DenBaars, Christian J. Zollner
Publikováno v:
ACS Photonics. 7:554-561
The disinfection industry would greatly benefit from efficient, robust, high-power deep-ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN LEDs is limited by poor...
Publikováno v:
Physical Review Materials. 5
Dislocations provide fast diffusion pathways for atoms in semiconductors which can alter compositional profiles of finely tuned heterostructures. We show in model lattice-mismatched IV-VI semiconductor heterostructures of SnSe/PbSe on GaAs substrates
Publikováno v:
Nano Letters. 19:1428-1436
Heterogeneous integration of semiconductors combines the functionality of different materials, enabling technologies such as III-V lasers and solar cells on silicon and GaN LEDs on sapphire. However, threading dislocations generated during the epitax
Autor:
Benjamin Damilano, Bastien Bonef, E. Di Russo, David Cooper, L. Rigutti, Guy Feuillet, A. Mavel, V. Fan Arcara, Névine Rochat, Stéphane Vézian, Adeline Grenier, Marc Veillerot, Ioanna Dimkou, Jean-Yves Duboz, Eva Monroy
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Nanotechnology, Institute of Physics, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
International audience; A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b05f89a76ab794dd9436f2ebf8e018e7
https://hal-cnrs.archives-ouvertes.fr/hal-03411327
https://hal-cnrs.archives-ouvertes.fr/hal-03411327
Autor:
S. P. DenBaars, Guillaume Lheureux, Bastien Bonef, Shuji Nakamura, Abdullah I. Alhassan, Ramunas Aleksiejunas, James S. Speck, Saulius Marcinkevicius, Cheyenne Lynsky, Claude Weisbuch, Leah Y. Kuritzky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e89efc87115944101caa1cf6c7d5651
https://doi.org/10.2172/1761272
https://doi.org/10.2172/1761272
Autor:
Burhan K. Saifaddin, Yuewei Zhang, Yifan Yao, Bastien Bonef, Jianfeng Wang, Shuji Nakamura, Michael Iza, Abdullah Almogbel, James S. Speck, Erin C. Young, Christian J. Zollner, Steven P. DenBaars, Micha N. Fireman
Publikováno v:
Optics Express. 29:40781
Highly doped n-Al0.6Ga0.4N can be used to form tunnel junctions (TJs) on deep ultraviolet (UVC) LEDs and markedly increase the light extraction efficiency (LEE) compared to the use of p-GaN/p-AlGaN. High quality Al0.6Ga0.4N was grown by NH3-assisted
Autor:
Bastien Bonef, Matthew S. Wong, Joown Choi, Feng Wu, Jie Song, James S. Speck, Michel Khoury, Panpan Li, Tom Mates, Steven P. DenBaars, Shuji Nakamura, Haojun Zhang, Hongjian Li
Publikováno v:
Optics express. 28(12)
We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy observatio