Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Bastian Vogler"'
Publikováno v:
2022 IEEE Transportation Electrification Conference & Expo (ITEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70e198dd2485d4f639c0178d4142ee51
https://doi.org/10.1109/itec53557.2022.9813792
https://doi.org/10.1109/itec53557.2022.9813792
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A new gate driver IC in SOI technology is presented which integrates all primary and secondary side driver functions for a three-phase MOSFET power inverter system and with brake chopper on a single chip. Thanks to the used SOI technology which block
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::399004d03443c167cd9bfa1e2e55869e
https://doi.org/10.23919/ispsd.2017.7988912
https://doi.org/10.23919/ispsd.2017.7988912
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Novel gate driver ICs for the control of 1200V SiC-JFET and -MOSFET half bridges based on high voltage silicon on insulator (SOI) technology are presented. The driver ICs features an extended gate voltage range of 20V and due to an innovative level s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b3d515ba1a108015a150f40142a0934
https://doi.org/10.1109/ispsd.2016.7520874
https://doi.org/10.1109/ispsd.2016.7520874
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A novel gate driver for the control of 1200V IGBT switches in Three-Level Neutral Point Clamp (3L-NPC) half bridges based on high voltage silicon on insulator (SOI) technology is presented. The driver features a safety concept dedicated for 3L-NPC ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee8261b1d7d898d34f8db9db4207b5d
https://doi.org/10.1109/ispsd.2015.7123457
https://doi.org/10.1109/ispsd.2015.7123457
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A novel approach for medium power IPMs is presented combining 600V and 1200V IGBT/FWD-inverter modules based on spring contact technology with advanced silicon on insulator (SOI) gate driver ICs with fully integrated V CE -monitoring and negative tur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb76ad14f56b4fa8f976c01c99e2d7c0
https://doi.org/10.1109/ispsd.2014.6856040
https://doi.org/10.1109/ispsd.2014.6856040