Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Bastian Troger"'
Autor:
Sven Rzepka, Bastian Troger, L. Scheiter, Reinhold W. Ortmann, Mengjia Zhang, Rainer Dudek, R. Doring, Marcus Hildebrandt
Publikováno v:
2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
The development of automotive electronics towards autonomous driving applications generates various challenges, in particular also on the reliable functionality of components originally designed for consumer products. In addition to use with higher e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd593e64b0e2804df4d08d7d8e86683
https://doi.org/10.1109/eurosime.2019.8724584
https://doi.org/10.1109/eurosime.2019.8724584
Autor:
Frank Riedel, Bastian Troger, Thomas Fries, Martin Schellenberger, Alexander Mühlig, Dirk Lewke, Stefan Bauer, Hubert Wihr
Publikováno v:
Key Engineering Materials. 613:87-93
Leading edge lithography processes require silicon wafers of nearly perfect flatness. In order to improve wafer manufacturing processes as well as the wafer quality, already early manufacturing processes like grinding and lapping have to be monitored
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d0707f8c21c909b11cbe42883f11abb
https://doi.org/10.4028/www.scientific.net/kem.613.87
https://doi.org/10.4028/www.scientific.net/kem.613.87
Autor:
Matthias Meyer, Christoph Szigalla, Bastian Troger, Jochen Schmidt, Thorsten Gräfen, Alejandro Avellán, Eric Jung
Publikováno v:
Optik & Photonik. 12:36-37
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e7cac204010db09ddddba5ecb40d40f
https://doi.org/10.1002/opph.201700029
https://doi.org/10.1002/opph.201700029
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Optical profilometer measurements are contact-free and fast. The depth of single high-aspect-ratio trenches and the step height of opaque materials can be measured. Deep trenches (50–225 µm) are measured with a white light interferometer. Shallowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd59643dce1385147a889ca2c3f9b7e
https://doi.org/10.1109/asmc.2015.7164456
https://doi.org/10.1109/asmc.2015.7164456
Autor:
Frank Riedel, Martin Schellenberger, Bastian Troger, Thomas Fries, Dirk Lewke, Stefan Bauer, Alexander Muehlig, Hubert Wihr, Lothar Pfitzner
Feature sizes of transistors manufactured on silicon wafers in high volume reached 22 nm and will further decrease in the future. Superior wafer surface quality is mandatory to produce such small feature sizes. One relevant quality parameter is the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e064d0cd6c7b7f9c67b9341f57d1aa6e
