Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Bastian Galler"'
Autor:
Conny Becht, Michael Binder, Bastian Galler, Jürgen Off, Maximilian Tauer, Alvaro Gomez-Iglesias, Heng Wang, Martin Strassburg, Ulrich T. Schwarz
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c36a19b575ece12c748705fb548daa3e
https://doi.org/10.1117/12.2608901
https://doi.org/10.1117/12.2608901
Autor:
Gaudenzio Meneghesso, Pradip Dalapati, Roland Zeisel, Bastian Galler, C. De Santi, Enrico Zanoni, Nicola Renso, Desiree Monti, Matteo Meneghini, Michael Binder
Publikováno v:
Light-Emitting Devices, Materials, and Applications.
Avalanche generation is a physical mechanism responsible for the breakdown at extremely high field, such as in the reverse bias conditions typical of ESD discharges. In this work, for the first time we provide experimental evidence that avalanche gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ae5d1189c110d37793158cdb0535d7d
https://doi.org/10.1117/12.2511152
https://doi.org/10.1117/12.2511152
Autor:
Thomas Kure, Sergey Yu. Karpov, Axel Hoffmann, Martin Strassburg, Bastian Galler, Markus R. Wagner, Felix Nippert, Hans-Jürgen Lugauer, Gordon Callsen
Publikováno v:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII.
We review recent advances in the understanding of the green gap phenomenon, the drastic reduction of quantum efficiency of c-plane InGaN/GaN light-emitting diodes (LEDs) towards the green spectral region. In particular, we have decoupled the contribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b14a720c005588ea16731248231f896
https://doi.org/10.1117/12.2292437
https://doi.org/10.1117/12.2292437
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:R3146-R3159
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906c678996ba1b195bd76028cfc637d1
https://doi.org/10.1149/2.0191601jss
https://doi.org/10.1149/2.0191601jss
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 9:312-316
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94e39b09e06e672cdfaf1db47ba6581
https://doi.org/10.1002/pssr.201510073
https://doi.org/10.1002/pssr.201510073
Autor:
Martin Strassburg, Holger Koch, Bastian Galler, Hans-Juergen Lugauer, Holger Kalisch, Andrei Vescan, Ines Pietzonka
Publikováno v:
Journal of Crystal Growth. 414:42-48
A comprehensive study on the effect of antimony on growth mode and crystal properties of thick InGaN layers grown by metal-organic vapor phase epitaxy is presented. Two growth regimes are identified by atomic force microscopy: while already minor ant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ea248f99dd92a734d6942832658918
https://doi.org/10.1016/j.jcrysgro.2014.10.041
https://doi.org/10.1016/j.jcrysgro.2014.10.041
Autor:
I. E. Titkov, Amit Yadav, V. L. Zerova, Edik U. Rafailov, Ines Pietzonka, Martin Strassburg, Hans-Juergen Lugauer, Modestas Zulonas, Bastian Galler, Sergey Yu. Karpov
Publikováno v:
IEEE Journal of Quantum Electronics. 50:911-920
Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62c3d082863321e3697afdef168ed896
https://doi.org/10.1109/jqe.2014.2359958
https://doi.org/10.1109/jqe.2014.2359958
Autor:
J.-P. Ahl, Michael Binder, B. Michel, Bastian Galler, H. Koch, J. Hertkorn, Bernhard Holländer
Publikováno v:
Journal of Crystal Growth. 398:33-39
We compared InGaN- and AlInGaN-layers grown by metal-organic vapor phase epitaxy (MOVPE) in terms of morphology, growth mode and indium incorporation. The growth parameters of the AlInGaN layers only differed from InGaN growth by an additional trimet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62b4f282c66ada3121e1e4275d2ef7fe
https://doi.org/10.1016/j.jcrysgro.2014.03.043
https://doi.org/10.1016/j.jcrysgro.2014.03.043
Autor:
Michael Binder, Hans-Jürgen Lugauer, Ines Pietzonka, Bastian Galler, Dominique Bougeard, Anna Nirschl, Roland Zeisel, Marina Schmid, Matthias Sabathil
Recent experimental investigations on the reduction of internal quantum efficiency with increasing current density in (AlInGa)N quantum well structures show that Auger recombination is a significant contributor to the so-called "droop" phenomenon. Us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10ed4bc8913b784291008b6c83cb813d
https://epub.uni-regensburg.de/33365/
https://epub.uni-regensburg.de/33365/
Autor:
Stefano Dominici, Gaudenzio Meneghesso, M. Mandurrino, Roland Zeisel, Enrico Zanoni, C. De Santi, Francesco Bertazzi, Bastian Galler, Michele Goano, Nicola Trivellin, Matteo Meneghini, M. La Grassa, Berthold Hahn
The thermal droop (reduction of the optical power when the temperature is increased) is a phenomenon that strongly limits the efficiency of InGaN-based light-emitting diodes. In this paper we analyze the role of Shockley-Read-Hall (SRH) recombination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0014298a7e6054eb184f71cb9121750f
http://hdl.handle.net/11583/2637671
http://hdl.handle.net/11583/2637671