Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Baskar Krishnan"'
Publikováno v:
ACS Omega, Vol 4, Iss 12, Pp 14772-14779 (2019)
Externí odkaz:
https://doaj.org/article/e7cf2f43e052429da420a9bd1b4b2ceb
Autor:
Surender, Subburaj, Prabakaran, Kandasamy, Pradeep, Siddham, Davis Jacob, Inbaraj, Feng Lu, Yong, Balakumar, Subramanian, Baskar, Krishnan
Publikováno v:
In Optical Materials February 2023 136
Autor:
Ganesh, Vattikondala, Pandikumar, Alagarsamy, Alizadeh, Mahdi, Kalidoss, Ramji, Baskar, Krishnan
Publikováno v:
In International Journal of Hydrogen Energy 18 March 2020 45(15):8198-8222
Publikováno v:
ACS Omega, Vol 4, Iss 12, Pp 14772-14779 (2019)
ACS Omega
ACS Omega
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions we
Autor:
Loganathan Ravi, Baskar Krishnan
Publikováno v:
Optik. 178:66-73
In this work, lattice-matched AlInGaN/GaN epilayers are grown on c-plane Al2O3 substrate by metal organic chemical vapor deposition technique. The structural and optical properties of AlInGaN/GaN epilayers have been studied and compared. TMIn and TMA
Autor:
Loganathan Ravi, Baskar Krishnan
Publikováno v:
Superlattices and Microstructures. 123:144-153
This paper reports on the unique approach adopted for the growth of vertically aligned two-dimensional AlN microwall arrays by a catalyst-free metal organic chemical vapor deposition (MOCVD) system via a two-step growth method. Wall-like structures a
Autor:
Baskar Krishnan, Ramesh Raju, Prabakaran Kandasamy, Sanjay Sankaranarayanan, Saravanan Gengan
Well-defined Dahlia type gallium nitride flowers (GaNFs) have been synthesized on c-plane sapphire substrates at different growth conditions using chemical vapour deposition system. The growth was carried out without any catalyst medium for favouring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1157991d79f0142c4d52b2da77d1e1af
https://aaltodoc.aalto.fi/handle/123456789/102096
https://aaltodoc.aalto.fi/handle/123456789/102096
Publikováno v:
Applied Surface Science. 449:213-220
Gallium nitride (GaN) nanowires (NWs) are one of the most promising candidates for photoelectrode materials due to their tunable band edge potentials and high stability in electrolytes. In this study, GaN NWs were grown on sapphire (Al2O3) (002) and
Autor:
Ramesh Raju, Baskar Krishnan, Saravanan Gengan, Sanjay Sankaranarayanan, Prabakaran Kandasamy
Publikováno v:
Sensors and Actuators A: Physical. 332:113189
Device fabrication using semiconductor nanostructures for detecting ultraviolet (UV) radiations, especially UV-A (320–400 nm) has received much attention both at laboratory level and in commercial endeavours. In this work, we have attempted catalyt
Autor:
Surender Subburaj, Baskar Krishnan, Jayasakthi Mathiyan, Pradeep Siddham, Prabakaran Kandasamy, Shubra Singh
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
In this paper, InAlN epilayers were grown on the GaN/sapphire templates using metal-organic chemical vapour deposition (MOCVD) at 800 °C by varying the growth time. The variation in growth time is believed to be directly proportional to the thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48b7d83b270589c92f371becddc58014
https://doi.org/10.1007/978-3-319-97604-4_39
https://doi.org/10.1007/978-3-319-97604-4_39