Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Basil Tsefrekas"'
Autor:
Dean Buzby, Russell J. Low, Christopher E. Dube, Basil Tsefrekas, Robert Tavares, Weiming Zhang, Atul Gupta, Wesley Skinner, James Mullin
Publikováno v:
Energy Procedia. 8:706-711
In this paper we present recent advances of the Varian patterned ion implantation selective emitter solar cell process, Solion Blue. Varian's ion implantation system, known as Solion, is currently deployed in manufacturing. This novel doping approach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebcfdb54a916a1468e37ff839c3fd849
https://doi.org/10.1016/j.egypro.2011.06.205
https://doi.org/10.1016/j.egypro.2011.06.205
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
We present improvements in c-Si solar cell performance for high sheet resistance (Rsheet) emitters fabricated by ion implantation. We have investigated the effect of sheet resistance (60-115 Ω/sq) on cell efficiency (CE) and also evaluated the effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f9ef9b670a1b55d4c2cefeaac603b6
https://doi.org/10.1109/pvsc.2013.6744904
https://doi.org/10.1109/pvsc.2013.6744904
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
This paper presents work assessing the cell-to-module (CTM) efficiency loss of ion implant (IMP) cells in comparison with POCl 3 (POCl) diffusion cells, using both standard EVA and silicone encapsulants. In order to reduce uncertainty in CTM loss ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1de51eed150389be3162eac206b011
https://doi.org/10.1109/pvsc.2012.6318067
https://doi.org/10.1109/pvsc.2012.6318067
Autor:
Kevin M. Daniels, Basil Tsefrekas, Christopher E. Dube, Wesley Skinner, James Mullin, Bhosle Vikram M, Paul Sullivan
Publikováno v:
AIP Conference Proceedings.
This paper reports the benefits of using patterned ion implantation to create higher efficiency selective emitter solar cells. This doping approach uses in-situ masking to enable selective doping of the contact and field regions of the emitter in a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e664fcf05dfa3f31b68c0871984e6b49
https://doi.org/10.1063/1.4766489
https://doi.org/10.1063/1.4766489