Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Barykin Dmitrii"'
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 3 (2024)
In this study, a numerical simulation of the tunnel effect in the n-GaN/p-Si heterostructure has been performed. Variations of band diagrams, current-voltage characteristics and cutoff frequencies of the diode heterostructures under study were obtain
Externí odkaz:
https://doaj.org/article/aedab3fbf71c4bc59e13fff314ca2d54
