Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bart Berghmans"'
Autor:
L. Geenen, Thierry Conard, B. Van Daele, Wilfried Vandervorst, Alexis Franquet, Bart Berghmans
Publikováno v:
Applied Surface Science. 255:1316-1319
Reducing the energy of the primary ions will improve the depth resolution in SIMS depth profiling. At ultra low energies ( + ions, which are commonly used for their enhancement of negative secondary ion formation, and discuss the impact of these extr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab810a5c11fee2430f251acb43db2c1
https://doi.org/10.1016/j.apsusc.2008.05.020
https://doi.org/10.1016/j.apsusc.2008.05.020
Publikováno v:
Applied Surface Science. 255:1206-1214
Accurate modeling of the enhancement of the ionization probabilities of secondary ions (positive and negative) by the presence of reactive species requires a precise determination of their concentration at the outermost surface and thus a fundamental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ce112c30face647c9d86f8b7dd4fdf1
https://doi.org/10.1016/j.apsusc.2008.05.089
https://doi.org/10.1016/j.apsusc.2008.05.089
Publikováno v:
Surface and Interface Analysis. 43:225-227
Accurate knowledge of the stationary Cs retention during Ultra Low Energy (ULE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fac143ff438c0617b5f62cabfc8efb4a
https://doi.org/10.1002/sia.3676
https://doi.org/10.1002/sia.3676
Autor:
Alain Moussa, Jay Mody, Wouter Polspoel, Bart Berghmans, Jozefien Goossens, Pierre Eyben, Ray Duffy, Bartlomiej Jan Pawlak, Wilfried Vandervorst, R. G. R. Weemaes, M.J.H. van Dal, Monja Kaiser
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:648-648
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d60abeaeb995fbe995a1905269da203f
https://doi.org/10.1116/1.3432119
https://doi.org/10.1116/1.3432119
Autor:
Alain Moussa, Bart Berghmans, Jozefien Goossens, Ray Duffy, Bartlomiej Jan Pawlak, M.J.H. van Dal, Monja Kaiser, Wouter Polspoel, Wilfried Vandervorst, Pierre Eyben, Jay Mody, R. G. R. Weemaes
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C1H5-C1H13
With emerging three-dimensional device architectures for advanced silicon devices such as fin field-effect-transistors (FinFETs), new metrology challenges are faced to characterize dopants. The ratio of dopant concentration in the top surface and sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f1c31b0184f6b38e14af21e55c41c77
https://doi.org/10.1116/1.3269755
https://doi.org/10.1116/1.3269755
Autor:
Wilfried Vandervorst, Bart Berghmans
Publikováno v:
Journal of Applied Physics. 106:033509
The effect of oxygen flooding during ultralow energy SIMS depth profiling of silicon with Cs+ primary ions is presented. New experimental data show the effective sputtering yield of silicon in the presence of oxygen, as well as the energy distributio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbbe3378c347498f4fa276a99100211a
https://doi.org/10.1063/1.3190526
https://doi.org/10.1063/1.3190526