Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Barry R. Allen"'
Autor:
Huei Wang, T.R. Block, A.K. Oki, J. Cowles, M. Nishimoto, Kevin W. Kobayashi, J.H. Elliott, Liem T. Tran, Barry R. Allen, D.C. Streit
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:2541-2552
This paper will discuss the practical design of an InP-based heterojunction bipolar transistor (HBT) Q-band high IP3 monolithic microwave integrated circuit (MMIC) amplifier. The amplifier features a novel "double-balanced" design approach that incor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89eb54f0043d28a66c6d0c97fabc1365
https://doi.org/10.1109/22.739246
https://doi.org/10.1109/22.739246
Autor:
Y.C. Chen, Huei Wang, Y.-L. Kok, Peter H. Siegel, Barry R. Allen, Richard Lai, M.V. Aust, Todd Gaier, T.-W. Huang, Robert J. Dengler
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:1660-1666
This paper presents the design, fabrication, and test results of a three-stage 155-GHz monolithic low-noise amplifier (LNA) fabricated with the 0.1-/spl mu/m pseudomorphic (PM) InAlAs-InGaAs-InP HEMT technology. With this amplifier in a test fixture,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df231c736104efc609a2d72bee173d9
https://doi.org/10.1109/22.734551
https://doi.org/10.1109/22.734551
Autor:
T.R. Block, Barry R. Allen, Huei Wang, E.W. Lin, G.S. Dow, Liem T. Tran, Kwo Wei Chang, Dwight C. Streit, Aaron K. Oki, J. Cowles
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:1419-1425
A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e14f3d013274dbfe9f359eb8140cadc
https://doi.org/10.1109/4.540050
https://doi.org/10.1109/4.540050
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:1055-1061
Monolithic W-band push-pull power amplifiers have been developed using 0.1-/spl mu/m AlGaAs/InGaAs/GaAs pseudomorphic T-gate power HEMT technology. The novel design approach utilizes a push-pull topology to take advantage of a virtual ground between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5274309b203f9f5746d04d59d4d44714
https://doi.org/10.1109/4.466079
https://doi.org/10.1109/4.466079
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:1010-1016
A W-band source module providing 4-GHz tuning bandwidth (92.5-96.5 GHz) has been developed. This module consists of three MMIC chips: a 23.5 GHz HBT VCO, a 23.5-94 GHz HEMT frequency quadrupler and a W-band three-stage HEMT output amplifier, all fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a9747add62926a7715eb1fa474afc8
https://doi.org/10.1109/22.382059
https://doi.org/10.1109/22.382059
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 41:992-997
Two wideband (8-18-GHz) single-stage MMIC (monolithic microwave integrated circuit) low-noise amplifiers (LNAs) using 0.2- mu m T-gate InGaAs pseudomorphic HEMT (high-electron-mobility transistor) technology, designed and fabricated for room temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4504c7622bcdee2d3cff09467c1616
https://doi.org/10.1109/22.238514
https://doi.org/10.1109/22.238514
Autor:
K.L. Tan, T.N. Ton, J. Berenz, J.J. Raggio, K.W. Chang, Po-Hsin Liu, G.S. Dow, Huei Wang, T.S. Lin, P.D. Chow, D.C. Streit, Barry R. Allen, T.H. Chen, S.B. Bui
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 40:417-428
High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd778d7578ab8e2574168f39af3c3658
https://doi.org/10.1109/22.121716
https://doi.org/10.1109/22.121716
Publikováno v:
IEEE Microwave and Guided Wave Letters. 9:529-531
A 180-GHz monolithic sub-harmonic diode mixer is developed using 0.08-/spl mu/m pseudomorphic InAlAs-InGaAs HEMT MMIC process on a 2-mil-thick InP substrate. This mixer demonstrates a conversion loss of better than 16.5 dB from 175 to 182 GHz with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b869c10a7b3362b1f851fd9b8e02315b
https://doi.org/10.1109/75.819421
https://doi.org/10.1109/75.819421
Autor:
D.C. Streit, T.R. Block, Barry R. Allen, Yon-Lin Kok, Michael E. Barsky, Huei Wang, M. Sholley, Todd Gaier, Richard Lai, T.-W. Huang, Y.C. Chen, Lorene Samoska
Publikováno v:
IEEE Microwave and Guided Wave Letters. 9:311-313
The authors present the results of two 160-190-GHz monolithic low-noise amplifiers (LNAs) fabricated with 0.07-/spl mu/m pseudomorphic (PM) InAlAs-InGaAs-InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e8699d4b2fc2ce621566d87e63a8efa
https://doi.org/10.1109/75.779912
https://doi.org/10.1109/75.779912
Publikováno v:
Proceedings of 1994 IEEE GaAs IC Symposium.
This paper reports the first W-band monolithic single sideband FMCW transceiver with direct digital synthesizer modulation. This heterodyne transceiver improves the system sensitivity over the previously reported homodyne approach. The complete trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a12faa7872304d2009c1864316852b4c
https://doi.org/10.1109/gaas.1994.636931
https://doi.org/10.1109/gaas.1994.636931