Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Barry Linder"'
Autor:
Ernest Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Barry Linder
Publikováno v:
Design-Process-Technology Co-optimization XV.
The required reliability of a system depends on its intended market. Consumer electronics have a high tolerance for faults, IBM Enterprise Systems have a near zero fault requirement, while servers and data centers have a fault tolerance in between th
Publikováno v:
IRPS
We have carried out an investigation for equivalence among three different stress methods: ramped voltage stress (RVS) method, ramped current stress (RCS) method, and constant voltage stress (CVS) method. Unlike the conventional RVS test with a const
Autor:
Richard G. Southwick, Hemanth Jagannathan, Huimei Zhou, Barry Linder, Ruqiang Bao, T. Ando, Dechao Guo, Vijay Narayanan, Lee Choonghyun
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We report for the first time that replacement metal gate (RMG) work function metal (WFM) modulates the interface defects in Silicon and SiGe MOSFETs. Changing the effective work function (eWF) towards nFET band edge provides lower interface defects a
Autor:
Keith A. Jenkins, Alan J. Weger, Peilin Song, Barry Linder, Franco Stellari, Giuseppe La Rosa
Publikováno v:
IRPS
Spontaneous near infrared (NIR) emission is used for measuring transistor channel temperature in ICs. Emission modeling and data analysis are leveraged to estimate the peak temperature and thermal time constant inside the channel of CMOS transistors.
Publikováno v:
IRPS
Voltage drop (IR drop) and Electromigration (EM) reliability are two key related aspects for on-chip power grid design considerations. Good EM reliability ensures no EM induced void formation in the interconnect to cause a fatal resistance increase d
Publikováno v:
IRPS
With the power density increase for higher performance demand in advanced circuits, the risk of excessive self-heating in BEOL metals carrying high electrical currents also increases. It is of a critical importance to accurately predict transient the
Publikováno v:
Micro-and Nanoelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7274d8941d7abba5c2762f3397a64dd4
https://doi.org/10.1201/b17597-7
https://doi.org/10.1201/b17597-7
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
With increasingly complex manufacturing processes in advanced technology nodes, time-to-breakdown (Tbd) of MOL and BEOL dielectrics are significantly affected by dielectric thickness variations across the wafer. such variations can affect Tbd distrib
Publikováno v:
ECS Transactions. 53:187-192
Over the last couple of scaling generations the gate stack in leading edge technology has migrated from Poly-Si and SiON to a metal gate with a bi-layer of a Hafnium based dielectric with a SiON interlayer (IL). This switch yielded immediate gains in