Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Barry Lieberman"'
Autor:
Pei-yang Yan, Barry Lieberman, Ted Liang, Emily Y. Shu, Seh-Jin Park, Guojing Zhang, Ping Qu, Alan R. Stivers, Gilroy Vandentop, Sven Henrichs, Erdem Ultanir, Peter Sanchez
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be availab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24a465211f12bfefb302d0bae38c4db
https://doi.org/10.1117/12.728941
https://doi.org/10.1117/12.728941
Autor:
Barry Lieberman
Publikováno v:
SPIE Proceedings.
The non-telecentricity of EUV lithography exposure systems translates into a very severe specification for EUV mask flatness that is typically 10 times tighter than the typical current specification for masks used in 193 nm wavelength exposure system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::633a6ff51cb6073c9418f0c5f0178d1a
https://doi.org/10.1117/12.707136
https://doi.org/10.1117/12.707136
Autor:
Max Lau, Kyung M. Lee, Sascha Perlitz, Thomas Scherübl, Ki-Ho Baik, Ute Buttgereit, Barry Lieberman, Malahat Tavassoli
Publikováno v:
SPIE Proceedings.
As lithography mask process moves toward 45nm and 32nm node, phase control is becoming more important than ever. Both attenuated and alternating PSMs (Phase Shift Masks) need precise control of phase as a function of both pitch and target sizes. Howe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa86a2ae730187fb7c953ed47b5326d
https://doi.org/10.1117/12.712908
https://doi.org/10.1117/12.712908
Publikováno v:
SPIE Proceedings.
We have developed and characterized a stack of TaN (absorber) and TaON (ARC) using reactive magnetron sputtering method. Two DOE (design of experiments) were performed with varying gas and power parameters and their effects on the various film parame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a354d2e3f7f34961918e0cd3686bbd27
https://doi.org/10.1117/12.625006
https://doi.org/10.1117/12.625006
Publikováno v:
SPIE Proceedings.
This article presents the evolution of the first fully automated simulation based mask defect dispositioning and defect management system used since late 2002 in a production environment at Intel Mask Operation (IMO). Given that inspection tools flag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e84854103f5abccabf77f1faa5f051dd
https://doi.org/10.1117/12.569096
https://doi.org/10.1117/12.569096
Autor:
Kangmin Hsia, Pei-yang Yan, Rajesh Nagpal, Ted Liang, Alan R. Stivers, Barry Lieberman, Fu-Chang Lo, Michael Penn, Edita Tejnil, Emily Y. Shu, Guojing Zhang
Publikováno v:
SPIE Proceedings.
The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating bar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bab82ae6e6adf0cce6e99e23bc5f969
https://doi.org/10.1117/12.569176
https://doi.org/10.1117/12.569176
Publikováno v:
SPIE Proceedings.
Today's reticle inspection tools can provide a wealth of information about defects. We introduce here a system called DIVAS : Defect Inspection Viewing, Archiving, and Simulation that fully uses and efficiently manages this wealth of defect informati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59983120506419d91afef5b29ad4d8f0
https://doi.org/10.1117/12.467768
https://doi.org/10.1117/12.467768
Autor:
Michael Penn, Moonsuk Yi, Cindy C. Larson, Alan R. Stivers, Eric M. Gulliksong, Barry Lieberman, Gilbert V. Shelden, Ted Liang, Paul B. Mirkarimi, Christopher C. Walton, James A. Folta
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) multilayer defects (phase defects) are a defect type unique to extreme ultraviolet lithography (EUVL) masks. A manufacturable inspection capability for these defects is key to the success of EUV lithography. Simulations of E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b047097e894a3e7f2a275a058f21268c
https://doi.org/10.1117/12.468199
https://doi.org/10.1117/12.468199
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:3101
Mask repair plays an important role in yielding advanced masks that support the lithography roadmap. It is also one of the more challenging parts of mask fabrication. Electron beam induced deposition and etching have shown great potential for mask re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a8a7382cc6ed550a3a7bca7bd6b45b1
https://doi.org/10.1116/1.2062428
https://doi.org/10.1116/1.2062428
Publikováno v:
Nuclear Instruments and Methods. 124:165-173
We describe design, construction, and performance of a streamer chamber built for experiments where small cross sections necessitate the use of dense targets inside the chamber, and the passage of hundreds of particles per memory time through the cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ff7f468e17ac971df8ff0ea8da3456
https://doi.org/10.1016/0029-554x(75)90400-0
https://doi.org/10.1016/0029-554x(75)90400-0