Zobrazeno 1 - 10
of 108
pro vyhledávání: '"Barrios, P.J."'
Autor:
Jiao, Z.J., Lu, Z.G., Liu, J.R., Poole, P.J., Barrios, P.J., Poitras, D., Pakulski, G., Caballero, J., Zhang, X.P.
Publikováno v:
In Optics Communications 1 October 2012 285(21-22):4372-4375
Publikováno v:
In Optics Communications 2012 285(6):1323-1325
Autor:
Lu, Z.G., Liu, J.R., Poole, P.J., Jiao, Z.J., Barrios, P.J., Poitras, D., Caballero, J., Zhang, X.P.
Publikováno v:
In Optics Communications 2011 284(9):2323-2326
Akademický článek
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Autor:
Haffouz, S., Raymond, S., Lu, Z.G., Barrios, P.J., Roy-Guay, D., Wu, X., Liu, J.R., Poitras, D., Wasilewski, Z.R.
Publikováno v:
In Journal of Crystal Growth 2009 311(7):1803-1806
Akademický článek
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Narrow ridge waveguide (5um) laser diodes were fabricated using type-I InGaAsSb/AlInGaAsSb quantum well active regions on GaSb. The devices operate in continuous-wave mode near 3254nm with a total light output of 7.4mW at 20°C (uncoated facets). ©
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1674::cf7d02f85b8ceee1da2cc74b53eadffb
https://nrc-publications.canada.ca/eng/view/object/?id=eac845fa-4512-40c6-adac-5e16dbd1a373
https://nrc-publications.canada.ca/eng/view/object/?id=eac845fa-4512-40c6-adac-5e16dbd1a373
A tunable external cavity laser (ECL) near 3.24 um was developed using semiconductor laser gain chips based on GaSb. The type-1 interband laser diodes were grown by molecular beam epitaxy using 17 nm InGaAsSb compressively-strained quantum wells with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1674::b3b3953529b5f8450749333e57fa6322
https://nrc-publications.canada.ca/eng/view/object/?id=4c47a403-464f-4989-a0ba-06f60b51dcfe
https://nrc-publications.canada.ca/eng/view/object/?id=4c47a403-464f-4989-a0ba-06f60b51dcfe
Autor:
Gupta, J.A., Barrios, P.J., Bezinger, A., Waldron, P., Ventrudo, B.F., Lapointe, J., Poitras, D., Storey, C.
Type-I interband laser diodes were developed for trace gas sensing applications in the 2-4um wavelength range. The devices were grown by molecular beam epitaxy on GaSb substrates using InGaAsSb/Al(In)GaAsSb active regions. Tunable, single-mode lasers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1674::7ab419835bc82d15d7a7e7f711e36f37
https://nrc-publications.canada.ca/eng/view/object/?id=50ab806a-8915-416f-a4b2-1ad86a7258bd
https://nrc-publications.canada.ca/eng/view/object/?id=50ab806a-8915-416f-a4b2-1ad86a7258bd
We demonstrate 437 GHz optical pulse train generation based on grating coupled external cavities using InAs/InP quantum dots as the gain material. It is the highest repetition rate ever produced by QD lasers. © 2011 Optical Society of America.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1674::88e4255b097261c1b84944a5974ac481
https://nrc-publications.canada.ca/eng/view/object/?id=a5f822c5-6407-45ca-8110-9dc6017ab186
https://nrc-publications.canada.ca/eng/view/object/?id=a5f822c5-6407-45ca-8110-9dc6017ab186