Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Barmak Mansoorian"'
Autor:
Jeff Rysinski, Shi Yan, Takuji Soeno, Steven H. Huang, David Estrada, Kevin Stevulak, Ryohei Funatsu, Barmak Mansoorian, Tetsuya Hayashida, Hiroshi Shimamoto, Takayuki Yamashita, Tomohiro Nakamura
Publikováno v:
ISSCC
To realize next-generation highly realistic sensation broadcasting systems, the research and development of 8K ultrahigh-definition television (UHDTV) systems have been promoted. To realize 8K video cameras, 33Mpixel sensors [1-2] and a full-resoluti
Autor:
M.W. Hansen, Volkan H. Ozguz, Daniel Van Blerkom, Sadik C. Esener, Chi Fan, Gary C. Marsden, Barmak Mansoorian
Publikováno v:
Applied optics. 34(17)
We investigate the performance of free-space optical interconnection systems at the technology level. Specifically, three optical transmitter technologies, lead-lanthanum-zirconate-titanate and multiple-quantum-well modulators and vertical-cavity sur
Autor:
Ryohei Funatsu, Takayuki Yamashita, Kohji Mitani, Yuji Nojiri, Barmak Mansoorian, Steven H. Huang
Publikováno v:
SPIE Proceedings.
We have been developing an ultra high definition television (UHDTV) system with a 7,680 horizontal by 4,320 vertical pixel resolution and a 60 Hz frame rate. This system, which is called Super Hi-vision (SHV), is expected to serve the next generation
Autor:
Andrew Messier, Lin Ping Ang, A.M. Soares, Charles Stevenson, Richard Slattery, Stewart Clark, D.D. Rathman, Robert Berger, Douglas J. Young, Kevin Newcomb, Barmak Mansoorian, D. C. Shaver, J.M. Knecht, Vyshnavi Suntharalingam, K. Warner
Publikováno v:
ISSCC
The dominant trend with conventional image sensors is toward scaled-down pixel sizes to increase spatial resolution and decrease chip size and cost [1]. While highly capable chips, these monolithic image sensors devote substantial perimeter area to s
Autor:
D. Gunn, Thierry Pinguet, D.A. Van Blerkom, C. Gunn, Drew Guckenberger, D. Eliyahu, O. Salminen, Barmak Mansoorian
Publikováno v:
ISSCC
A mostly integrated 10.2GHz optoelectronic oscillator (OEO) using Si photonics monolithic integration technology is reported. The OEO is a chip-scale device manufactured using a standard 0.13mum SOI CMOS process, with phase noise of -112dBc/Hz at 10k
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Publikováno v:
1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).
Many imaging systems with industrial and machine vision applications now require sensors with a combination of >1 Mpixel revolution and >30 frames/s rate. This must be achieved at low cost and with minimum impact on system complexity or power consump
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:397-399
A full CMOS emitter-coupled logic (ECL)-to-CMOS voltage level converter has been developed. A diode-biased AC-coupled circuit is used to convert digital signals from ECL to CMOS voltage levels for use in digital data transmission. This technique make
Conference
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