High-mobility solution-processed zinc oxide thin films on silicon nitride

Autor: Benlamri, M., Bothe, K.M., Ma, A.M., Shoute, G., Afshar, A., Sharma, H., Mohammadpour, A., Gupta, M., Cadien, K.C., Tsui, Y.Y., Shankar, K., Barlage, D.W.

A high effective electron mobility of 33 cm2 V-1 s-1 was achieved in solution-processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si3N4) as growth substrate resulted in a mobility improvement by a factor of 2.5 with re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1674::7d341314ffdf0b7bd793c70260ca97d4
https://nrc-publications.canada.ca/eng/view/object/?id=33dcc3fc-b371-4aa8-aa15-934bd0eb5556

Pulsed-IV and RF waveform measurements of unique high-K dielectric GaN MOSFETs.

Autor: Roff, C., McGovern, P., Benedikt, J., Tasker, P.J., Johnson, M.A., Barlage, D.W., Sutton, W., Braddock, D.

Publikováno v: 2008 IEEE International Conference on Microwaves, Communications, Antennas & Electronic Systems; 2008, p1-4, 4p

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT.

Autor: Barlage, D.W., Heins, M.S., Mu, J.H., Fresina, M.T., Ahmari, D.A., Hartman, Q.J., Stillman, G.E., Feng, M.

Publikováno v: Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors; 1998, p511-514, 4p

Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide.

Autor: Heins, M.S., Barlage, D.W., Fresina, M.T., Ahmari, D.A., Hartmann, Q.J., Stillman, G.E., Feng, M.

Publikováno v: 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Technical Papers; 1997, p215-218, 4p