Role of rigidity and temperature in the kinetics of photodarkening in Ge(x)As((45-x))Se(55) thin films

Autor: Barik, AR, Adarsh, KV, Naik, Ramakanta, Ganesan, R, Yang, Guang, Zhao, Donghui, Jain, Himanshu, Shimakawa, K

Publikováno v: IndraStra Global.

We present insightful results on the kinetics of photodarkening (PD) in Ge(x)As(45-x)Se(55) glasses at the ambient and liquid helium temperatures when the network rigidity is increased by varying x from 0 to 16. We observe a many fold change in PD an

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https://igi.indrastra.com/items/show/209459

Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film.

Autor: Barik AR; Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023, India., Bapna M; Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023, India., Drabold DA; Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701-2979, USA., Adarsh KV; Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023, India.

Publikováno v: Scientific reports [Sci Rep] 2014 Jan 14; Vol. 4, pp. 3686. Date of Electronic Publication: 2014 Jan 14.

Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films.

Autor: Khan P; Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023, India., Barik AR, Vinod EM, Sangunni KS, Jain H, Adarsh KV

Publikováno v: Optics express [Opt Express] 2012 May 21; Vol. 20 (11), pp. 12416-21.