Zobrazeno 1 - 10
of 300
pro vyhledávání: '"Bardeleben, H."'
Autor:
Murzakhanov, F. F., Sadovnikova, M. A., Mamin, G. V., Nagalyuk, S. S., von Bardeleben, H. J., Schmidt, W. G., Biktagirov, T., Gerstmann, U., Soltamov, V. A.
The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei. As quantum applications based on a polarization transfer from the el
Externí odkaz:
http://arxiv.org/abs/2404.06933
Autor:
Mu, Zhao, Zargaleh, S. A., von Bardeleben, H. J., Fröch, Johannes E., Cai, Hongbing, Yang, Xinge, Yang, Jianqun, Li, Xingji, Aharonovich, Igor, Gao, Weibo
Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR)
Externí odkaz:
http://arxiv.org/abs/2002.02613
Publikováno v:
Journal of Applied Physics; 10/28/2023, Vol. 134 Issue 16, p1-9, 9p
Autor:
Murzakhanov, F. F., Sadovnikova, M. A., Mamin, G. V., Nagalyuk, S. S., von Bardeleben, H. J., Schmidt, W. G., Biktagirov, T., Gerstmann, U., Soltamov, V. A.
Publikováno v:
Journal of Applied Physics; 9/28/2023, Vol. 134 Issue 12, p1-8, 8p
Publikováno v:
Phys. Rev. B 96, 085204 (2017)
Fluorescent paramagnetic defects in solids have become attractive systems for quantum information processing in the recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect in diamond with visible emission but alt
Externí odkaz:
http://arxiv.org/abs/1705.06229
Autor:
Thevenard, L., Gourdon, C., Haghgoo, S., Adam, J-P., von Bardeleben, H. J., Lemaître, A., Schoch, W., Thiaville, A.
Publikováno v:
Physical Review B 83 245211 (2012)
We have investigated numerically the field-driven propagation of perpendicularly magnetized ferromagnetic layers. It was then compared to the historical one-dimensional domain wall (DW) propagation model widely used in spintronics studies of magnetic
Externí odkaz:
http://arxiv.org/abs/1102.4789
Autor:
Cubukcu, M., von Bardeleben, H. J., Khazen, Kh., Cantin, J. L., Mauguin, O., Largeau, L., Lemaitre, A.
Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying l
Externí odkaz:
http://arxiv.org/abs/0908.0063
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Khazen, Kh., von Bardeleben, H. J., Cubukcu, M., Cantin, J. L., Novak, V., Olejnik, K., Cukr, M., Thevenard, L., Lemaitre, A.
The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of th
Externí odkaz:
http://arxiv.org/abs/0809.4644