Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Bardeleben, H J v"'
Autor:
Ertchak, D P, Kudryavtsev, Yu P, Guseva, M B, Alexandrov, A F, Evsyukov, S E, Babaev, V G, Krechko, L M, Koksharov, Yu A, Tichonov, A N, Blumenfeld, L A, Bardeleben, H J v
Publikováno v:
Journal of Physics: Condensed Matter; 1/25/1999, Vol. 11 Issue 3, p855-870, 16p
Publikováno v:
Journal of Physics D: Applied Physics; 6/28/2024, Vol. 57 Issue 25, p1-8, 8p
Publikováno v:
Frontiers in Quantum Science & Technology; 2023, p1-9, 9p
Publikováno v:
Catalysis Reviews: Science & Engineering; 2023, Vol. 65 Issue 4, p1521-1566, 46p
Autor:
Bai, Ying1 (AUTHOR), Cai, Zeng-Hua2 (AUTHOR), Wu, Yu-Ning1 (AUTHOR) ynwu@phy.ecnu.edu.cn, Chen, Shiyou1,3 (AUTHOR) chensy@ee.ecnu.edu.cn
Publikováno v:
Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. MayJun2021, Vol. 176 Issue 5/6, p419-430. 12p.
Autor:
Sirringhaus, H., Brown, P.J.
Publikováno v:
Nature. 10/14/1999, Vol. 401 Issue 6754, p685. 4p. 2 Diagrams, 6 Graphs.
Autor:
Shan Hengsheng, Xiaoya Li, Zhiyu Lin, Ling Lv, Ming Xiao, Bin Chen, Zhen Bi, Jinjuan Du, Ruoshi Peng, Shengrui Xu, Jincheng Zhang, Yue Hao
Publikováno v:
ECS Journal of Solid State Science & Technology; 2018, Vol. 7 Issue 2, pP82-P86, 5p
Publikováno v:
Chinese Science Bulletin; Oct2008, Vol. 53 Issue 19, p2964-2972, 9p, 1 Diagram, 4 Charts, 4 Graphs
Publikováno v:
Semiconductor Science & Technology; Dec2018, Vol. 33 Issue 12, p1-1, 1p
Publikováno v:
Journal of Semiconductors; May2018, Vol. 39 Issue 5, p1-1, 1p