Výsledky vyhledávání - "Barbagiovanni, E."

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Simulation of the growth kinetics in group IV compound semiconductors

Autor: La Magna, A., Alberti, A., Barbagiovanni, E., Bongiorno, C., Cascio, M., Deretzis, I., La Via, F., Smecca, E.

Publikováno v: Phys. Status Solidi A 2019, 216, 1800597

We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization and implementation details are discussed for the particular case of the

Externí odkaz: http://arxiv.org/abs/2001.07980

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3C-SiC grown on Si by using a Si$_{1-x}$Ge$_x$ buffer layer

Autor: Zimbone, M., Zielinski, M., Barbagiovanni, E. G., Calabretta, C., La Via, F.

Publikováno v: Journal of Crystal Growth Volume 519, 1 August 2019, Pages 1-6

Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si substrate. In t

Externí odkaz: http://arxiv.org/abs/2001.05817

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Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Autor: Barbagiovanni, E. G., Strano, V., Franzò, G., Crupi, I., Mirabella, S.

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V$_o$) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two V$_o$ states

Externí odkaz: http://arxiv.org/abs/1502.03674

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Influence of interface potential on the effective mass in Ge nanostructures

Autor: Barbagiovanni, E. G., Cosentino, S., Lockwood, D. J., Filho, R. N. Costa, Terrasi, A., Mirabella, S.

The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effective mass that is related to the magnitude of the interface potential. Us

Externí odkaz: http://arxiv.org/abs/1502.03659

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Role of Quantum Confinement in Luminescence Efficiency of Group IV Nanostructures

Autor: Barbagiovanni, E. G., Lockwood, D. J., Rowell, N. L., Filho, R. N. Costa, Berbezier, I., Amiard, G., Favre, L., Ronda, A., Faustini, M., Grosso, D.

Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD s

Externí odkaz: http://arxiv.org/abs/1312.2321

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Quantum Confinement in Nonadditive Space with a Spatially Dependent Effective Mass for Si and Ge Quantum Wells

Autor: Barbagiovanni, E. G., Filho, R. N. Costa

We calculate the effect of a spatially dependent effective mass (SPDEM) [adapted from R. N. Costa Filho et al. Phys. Rev. A., \textbf{84} 050102 (2011)] on an electron and hole confined in a quantum well (QW). In the work of Costa Filho et al., the t

Externí odkaz: http://arxiv.org/abs/1311.5335

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