Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Barat Achinuq"'
Autor:
Ravi Acharya, Maddison Coke, Mason Adshead, Kexue Li, Barat Achinuq, Rongsheng Cai, A. Baset Gholizadeh, Janet Jacobs, Jessica L. Boland, Sarah J. Haigh, Katie L. Moore, David N. Jamieson, Richard J. Curry
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-7 (2024)
Abstract Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the 29Si iso
Externí odkaz:
https://doaj.org/article/47c59c5ec9b04c85aed5b523cb7d8ca5
Autor:
Gesa-R. Siemann, Seo-Jin Kim, Edgar Abarca Morales, Philip A. E. Murgatroyd, Andela Zivanovic, Brendan Edwards, Igor Marković, Federico Mazzola, Liam Trzaska, Oliver J. Clark, Chiara Bigi, Haijing Zhang, Barat Achinuq, Thorsten Hesjedal, Matthew D. Watson, Timur K. Kim, Peter Bencok, Gerrit van der Laan, Craig M. Polley, Mats Leandersson, Hanna Fedderwitz, Khadiza Ali, Thiagarajan Balasubramanian, Marcus Schmidt, Michael Baenitz, Helge Rosner, Phil D. C. King
Publikováno v:
npj Quantum Materials, Vol 8, Iss 1, Pp 1-7 (2023)
Abstract In half-metallic systems, electronic conduction is mediated by a single spin species, offering enormous potential for spintronic devices. Here, using microscopic-area angle-resolved photoemission, we show that a spin-polarised two-dimensiona
Externí odkaz:
https://doaj.org/article/933059cabb8f4f5fbacd4238dcc754b0
Autor:
Andreas Frisk, Barat Achinuq, David G. Newman, Emily Heppell, Maciej Dąbrowski, Robert J. Hicken, Gerrit van der Laan, Thorsten Hesjedal
The ability to control the in-plane magnetic anisotropy of a thin film is important for magnetic device applications. One way of accomplishing this task is by glancing angle deposition (GLAD). In this study, thin Co layers have been deposited using G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fceaf143a54752a0214ded9b5e2f47c
https://doi.org/10.1002/pssa.202300010
https://doi.org/10.1002/pssa.202300010
Autor:
David M Burn, Jheng-Cyuan Lin, Ryuji Fujita, Barat Achinuq, Joshua Bibby, Angadjit Singh, Andreas Frisk, Gerrit van der Laan, Thorsten Hesjedal
Publikováno v:
Nanotechnology. 34:275001
The topological surface states (TSSs) in topological insulators (TIs) offer exciting prospects for dissipationless spin transport. Common spin-based devices, such as spin valves, rely on trilayer structures in which a non-magnetic layer is sandwiched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9aea87b9de69ddbe4b71071c0e818c8f
https://doi.org/10.1088/1361-6528/acc663
https://doi.org/10.1088/1361-6528/acc663